模拟含硫大气和机械力作用下 AgNW 透明导电薄膜的腐蚀和导电性损伤

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Shan Wan, Tingting Wen, Bokai Liao, Xingpeng Guo
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引用次数: 0

摘要

银纳米线(AgNW)透明导电薄膜具有高柔性、高导电性、高透光率等特点,在柔性电子应用中具有显著优势。然而,在使用场合中,腐蚀和机械力的耦合作用容易使银纳米线薄膜的导电性能变差甚至失效,严重影响了银纳米线薄膜的使用可靠性。本研究首先利用扫描振动电极技术证实了 AgNW 薄膜存在电化学腐蚀。此外,还进行了电化学测量(包括 OCP、PDP 和 EIS),以研究 AgNW 薄膜在不同环境因素和机械力作用下的电化学腐蚀过程。扫描电子显微镜和方形电阻测试仪分别对其表面形貌和导电性能进行了表征和评估。实验结果表明,腐蚀-机械相互作用效应加剧了 AgNW 薄膜电导率的破坏过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Corrosion and conductivity damage of AgNW transparent conductive thin films under a simulated sulfur-containing atmosphere and mechanical force
Silver nanowire (AgNW) transparent conductive thin films possess high flexibility, high conductivity, high light transmittance and etc., demonstrating significant advantages in flexible electronics applications. However, in the service occasions, the coupled effect of corrosion and mechanical force easily makes the electrical conductivity of AgNW films deteriorate or even fail, which seriously affects the service reliability of AgNW films. In this work, scanning vibrating electrode technique was firstly used to confirm the existence of electrochemical corrosion on AgNW films. Furthermore, electrochemical measurements (including OCP, PDP and EIS) were carried out for researching the electrochemical corrosion process on AgNW films under different environmental factors and mechanical forces. Their surface morphologies and electrical conductivity were characterized and evaluated by the Scanning Electron Microscopy and square resistance tester respectively. Experimental results indicate that the corrosion-mechanics interaction effect aggravates the damage process of electrical conductivity of AgNW films.
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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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