{"title":"针对 3D 通信电路应用优化工艺的高性能碳纳米管光电晶体管","authors":"Shuang Liu;Heyi Huang;Yanqing Li;Yadong Zhang;Feixiong Wang;Zhaohao Zhang;Qingzhu Zhang;Jiali Huo;Jiaxin Yao;Jing Wen;Huaxiang Yin","doi":"10.1109/JEDS.2024.3465669","DOIUrl":null,"url":null,"abstract":"One-dimensionalcarbon nanotube field-effect transistors (CNFETs) have offered a solution for obtaining high transistor performance in a compatible low-temperature BEOL process, enabling monolithic 3D integration benefits for more functional circuits. Currently, CNT transistors need to further improve their performance with a more stable process and explore the most suitable circuit application scene. In this study, we successfully enhanced the performance of CNFETs through special Y2O3 film passivation and vacuum annealing processes. The on-state current of the optimized device was improved by \n<inline-formula> <tex-math>$36.6\\times $ </tex-math></inline-formula>\n compared to the device without these processes. Besides, the subthreshold swing (SS) was notably reduced from 259 mV/dec to 215 mV/dec and the threshold voltage was decreased from 2.02 V to 1.79 V due to the reduction of the interface state. Meanwhile, the devices’ optoelectronic characteristics were significantly improved and exhibited a \n<inline-formula> <tex-math>$72\\times $ </tex-math></inline-formula>\n increase in \n<inline-formula> <tex-math>$\\Delta $ </tex-math></inline-formula>\n Ids under identical illumination. With an improved annealing process, the \n<inline-formula> <tex-math>$\\Delta $ </tex-math></inline-formula>\n Ids were further increased to \n<inline-formula> <tex-math>$231\\times $ </tex-math></inline-formula>\n compared to the original device because of the reduction of defects within the device. Finally, the tentative Morse code communication applications all by the optimized CNFETs were obtained. These technologies and functional implementations provided a promising approach for future 3D functional communication systems with CNT technology.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"889-897"},"PeriodicalIF":2.0000,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10685345","citationCount":"0","resultStr":"{\"title\":\"High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit Applications\",\"authors\":\"Shuang Liu;Heyi Huang;Yanqing Li;Yadong Zhang;Feixiong Wang;Zhaohao Zhang;Qingzhu Zhang;Jiali Huo;Jiaxin Yao;Jing Wen;Huaxiang Yin\",\"doi\":\"10.1109/JEDS.2024.3465669\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"One-dimensionalcarbon nanotube field-effect transistors (CNFETs) have offered a solution for obtaining high transistor performance in a compatible low-temperature BEOL process, enabling monolithic 3D integration benefits for more functional circuits. Currently, CNT transistors need to further improve their performance with a more stable process and explore the most suitable circuit application scene. In this study, we successfully enhanced the performance of CNFETs through special Y2O3 film passivation and vacuum annealing processes. The on-state current of the optimized device was improved by \\n<inline-formula> <tex-math>$36.6\\\\times $ </tex-math></inline-formula>\\n compared to the device without these processes. Besides, the subthreshold swing (SS) was notably reduced from 259 mV/dec to 215 mV/dec and the threshold voltage was decreased from 2.02 V to 1.79 V due to the reduction of the interface state. Meanwhile, the devices’ optoelectronic characteristics were significantly improved and exhibited a \\n<inline-formula> <tex-math>$72\\\\times $ </tex-math></inline-formula>\\n increase in \\n<inline-formula> <tex-math>$\\\\Delta $ </tex-math></inline-formula>\\n Ids under identical illumination. With an improved annealing process, the \\n<inline-formula> <tex-math>$\\\\Delta $ </tex-math></inline-formula>\\n Ids were further increased to \\n<inline-formula> <tex-math>$231\\\\times $ </tex-math></inline-formula>\\n compared to the original device because of the reduction of defects within the device. Finally, the tentative Morse code communication applications all by the optimized CNFETs were obtained. These technologies and functional implementations provided a promising approach for future 3D functional communication systems with CNT technology.\",\"PeriodicalId\":13210,\"journal\":{\"name\":\"IEEE Journal of the Electron Devices Society\",\"volume\":\"12 \",\"pages\":\"889-897\"},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2024-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10685345\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of the Electron Devices Society\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10685345/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10685345/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit Applications
One-dimensionalcarbon nanotube field-effect transistors (CNFETs) have offered a solution for obtaining high transistor performance in a compatible low-temperature BEOL process, enabling monolithic 3D integration benefits for more functional circuits. Currently, CNT transistors need to further improve their performance with a more stable process and explore the most suitable circuit application scene. In this study, we successfully enhanced the performance of CNFETs through special Y2O3 film passivation and vacuum annealing processes. The on-state current of the optimized device was improved by
$36.6\times $
compared to the device without these processes. Besides, the subthreshold swing (SS) was notably reduced from 259 mV/dec to 215 mV/dec and the threshold voltage was decreased from 2.02 V to 1.79 V due to the reduction of the interface state. Meanwhile, the devices’ optoelectronic characteristics were significantly improved and exhibited a
$72\times $
increase in
$\Delta $
Ids under identical illumination. With an improved annealing process, the
$\Delta $
Ids were further increased to
$231\times $
compared to the original device because of the reduction of defects within the device. Finally, the tentative Morse code communication applications all by the optimized CNFETs were obtained. These technologies and functional implementations provided a promising approach for future 3D functional communication systems with CNT technology.
期刊介绍:
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.