{"title":"使用选择性蚀刻原位 SiN 钝化层的 E-Mode AlN/GaN HEMT 在 30 GHz 频率下的 5.59 W/mm 饱和输出功率密度","authors":"Pengfei Wang;Minhan Mi;Sirui An;Yuwei Zhou;Zhihong Chen;Qing Zhu;Xiang Du;Yilin Chen;Meng Zhang;Bin Hou;Ruqing Liu;Xiaohua Ma;Yue Hao","doi":"10.1109/LED.2024.3437765","DOIUrl":null,"url":null,"abstract":"This work reports on high-performance enhancement-mode (E-mode) AlN/GaN Schottky gate HEMT (AlN SGHEMT) for millimeter-wave applications. Utilizing an ultrathin 4-nm barrier of AlN tuned by the mechanical stress from in-situ SiN, and self-terminated etching technique, to form the E-mode AlN SGHEMT. As a result, the proposed device demonstrated positive threshold voltage (\n<inline-formula> <tex-math>${V}_{\\text {Th}}\\text {)}$ </tex-math></inline-formula>\n of 0.53 V, high maximum drain current density (\n<inline-formula> <tex-math>${I}_{\\text {d- {max}}}\\text {)}$ </tex-math></inline-formula>\n of 1.19 A/mm, and maximum transconductance (\n<inline-formula> <tex-math>${G}_{\\text {m- {max}}}\\text {)}$ </tex-math></inline-formula>\n of \n<inline-formula> <tex-math>$\\sim ~0.61$ </tex-math></inline-formula>\n S/mm. Load-pull test was carried out at 30 GHz, which illustrated the ability of device to deliver a saturated output power density (\n<inline-formula> <tex-math>${P}_{\\text {sat}}\\text {)}$ </tex-math></inline-formula>\n of 5.59 W/mm at a drain-source voltage (\n<inline-formula> <tex-math>${V}_{\\text {ds}}\\text {)}$ </tex-math></inline-formula>\n of 25 V. The excellent results highlight a new approach to obtain mmW RF E-mode GaN HEMTs at Ka-band.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer\",\"authors\":\"Pengfei Wang;Minhan Mi;Sirui An;Yuwei Zhou;Zhihong Chen;Qing Zhu;Xiang Du;Yilin Chen;Meng Zhang;Bin Hou;Ruqing Liu;Xiaohua Ma;Yue Hao\",\"doi\":\"10.1109/LED.2024.3437765\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work reports on high-performance enhancement-mode (E-mode) AlN/GaN Schottky gate HEMT (AlN SGHEMT) for millimeter-wave applications. Utilizing an ultrathin 4-nm barrier of AlN tuned by the mechanical stress from in-situ SiN, and self-terminated etching technique, to form the E-mode AlN SGHEMT. As a result, the proposed device demonstrated positive threshold voltage (\\n<inline-formula> <tex-math>${V}_{\\\\text {Th}}\\\\text {)}$ </tex-math></inline-formula>\\n of 0.53 V, high maximum drain current density (\\n<inline-formula> <tex-math>${I}_{\\\\text {d- {max}}}\\\\text {)}$ </tex-math></inline-formula>\\n of 1.19 A/mm, and maximum transconductance (\\n<inline-formula> <tex-math>${G}_{\\\\text {m- {max}}}\\\\text {)}$ </tex-math></inline-formula>\\n of \\n<inline-formula> <tex-math>$\\\\sim ~0.61$ </tex-math></inline-formula>\\n S/mm. Load-pull test was carried out at 30 GHz, which illustrated the ability of device to deliver a saturated output power density (\\n<inline-formula> <tex-math>${P}_{\\\\text {sat}}\\\\text {)}$ </tex-math></inline-formula>\\n of 5.59 W/mm at a drain-source voltage (\\n<inline-formula> <tex-math>${V}_{\\\\text {ds}}\\\\text {)}$ </tex-math></inline-formula>\\n of 25 V. The excellent results highlight a new approach to obtain mmW RF E-mode GaN HEMTs at Ka-band.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-08-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10636965/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10636965/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
这项研究报告了用于毫米波应用的高性能增强模式(E-mode)AlN/GaN 肖特基栅 HEMT(AlN SGHEMT)。利用原位 SiN 机械应力调谐的 4 纳米超薄 AlN 势垒和自终止蚀刻技术,形成了 E 模式 AlN SGHEMT。因此,该器件的正阈值电压({V}_{text {Th}\text {)}$为 0.53 V,最大漏极电流密度({I}_{text {d- {max}}}\text {)}$为 1.19 A/mm,最大跨导({G}_{text {m- {max}}\text {)}$为 0.61 S/mm。在 30 GHz 频率下进行了负载-拉力测试,结果表明,在漏极-源极电压(${V}_{text {ds}}\text {)}$为 25 V 时,器件能够提供 5.59 W/mm 的饱和输出功率密度(${P}_{text {sat}}\text {)}$。这些出色的结果凸显了一种获得 Ka 波段毫米波射频电模 GaN HEMT 的新方法。
5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer
This work reports on high-performance enhancement-mode (E-mode) AlN/GaN Schottky gate HEMT (AlN SGHEMT) for millimeter-wave applications. Utilizing an ultrathin 4-nm barrier of AlN tuned by the mechanical stress from in-situ SiN, and self-terminated etching technique, to form the E-mode AlN SGHEMT. As a result, the proposed device demonstrated positive threshold voltage (
${V}_{\text {Th}}\text {)}$
of 0.53 V, high maximum drain current density (
${I}_{\text {d- {max}}}\text {)}$
of 1.19 A/mm, and maximum transconductance (
${G}_{\text {m- {max}}}\text {)}$
of
$\sim ~0.61$
S/mm. Load-pull test was carried out at 30 GHz, which illustrated the ability of device to deliver a saturated output power density (
${P}_{\text {sat}}\text {)}$
of 5.59 W/mm at a drain-source voltage (
${V}_{\text {ds}}\text {)}$
of 25 V. The excellent results highlight a new approach to obtain mmW RF E-mode GaN HEMTs at Ka-band.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.