氢等离子体处理 p-GaN 栅极 HEMT 集成用于直流-直流转换器

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-08-14 DOI:10.1109/LED.2024.3442853

Fan Li;Ang Li;Shiqiang Wu;Weisheng Wang;Yuhao Zhu;Guohao Yu;Zhongming Zeng;Baoshun Zhang;Jiangmin Gu;Wen Liu

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引用次数: 0

摘要

本文介绍了一种基于氢等离子处理（H-treated）工艺的 p-GaN 门控 HEMT 技术的单片集成电路（IC）平台。实现了开关频率为 1 MHz 的 48 V DC-DC 电源转换。外围增强/耗尽（E/D-）模式器件形成电路元件，并与功率器件单片集成。这是首个用于单片 GaN 混合信号功率集成电路的 H 处理 p-GaN 平台，D 模器件将采用 H 处理 p-GaN 层作为栅极电介质，不需要额外的绝缘层。相应的 ASM-HEMT 模型已为计算机辅助电路设计进行了校准。模拟与静态/动态实验结果之间的出色一致性也已通过逆变器和比较器得到验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Hydrogen Plasma Treated p-GaN Gate HEMTs Integration for DC-DC Converter

This letter presents a monolithic integrated circuit (IC) platform based on the p-GaN gated HEMT technology with a hydrogen plasma treatment (H-treated) process. A 48 V DC-DC power conversion at a switching frequency of 1 MHz is realized. The peripheral enhancement/depletion (E/D-) mode devices formed circuit components, and monolithically integrated with the power device. This is the first H-treated p-GaN platform for the monolithic GaN mixed-signal power IC, the D-mode device will employ the H-treated p-GaN layer as the gate dielectric, with no additional insulator layer. The corresponding ASM-HEMT models have been calibrated for the computer-aided circuit design. Excellent agreement between simulation and static/dynamic experimental results have also been verified with inverters and comparators.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.