通过优化工艺提高氧化铟锌薄膜晶体管的性能

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-09-24 DOI:10.1109/JEDS.2024.3466956

Mingjun Zhang;Jinyang Huang;Zihan Wang;Paramasivam Balasubramanian;Yan Yan;Ye Zhou;Su-Ting Han;Lei Lu;Meng Zhang

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引用次数: 0

摘要

氧化铟锌（IZO）薄膜晶体管（TFT）的器件性能是通过工艺优化实现的。通过联合调整退火条件、沟道厚度和溅射气氛，可以精确调节粗糙度和氧空位（Vos）。优化后的 IZO TFT 的场效应迁移率最高可达 ~71.8 cm2/Vs，阈值电压为 ~-0.6 V。此外，还考察了 IZO TFT 在正/负偏压应力下的可靠性。X 射线光电子能谱和原子力显微镜分析证实，界面质量和 Vo 是影响器件性能和可靠性的两个关键因素。

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Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

The device performance of indium zinc oxide (IZO) thin-film transistors (TFTs) is optimized through process optimizations. By jointly adjusting the annealing condition, the channel thickness and the sputtering atmosphere, the roughness and oxygen vacancies (Vos) are precisely regulated. The optimized IZO TFTs can achieve the highest field effect mobility of ~71.8 cm2/Vs with a threshold voltage of ~-0.6 V. Reliability of IZO TFTs under positive/negative bias stress is also examined. The interface quality and the Vo are two key factors influencing the device performance and reliability, confirmed by X-ray photoelectron spectroscopy and atomic force microscopy analysis.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.