熵驱动合金化过氧化物纳米晶体实现高效稳定的发光二极管

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-08-20 DOI:10.1109/LED.2024.3446550

Tengfei Long;Han Miao;Sheng Wang;Rui Li;Chengxi Zhang;Lin Wang;Tao Hu;Chonghe Li;Xuyong Yang

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引用次数: 0

摘要

基于透镜纳米晶体（PeNCs）的发光二极管（PeLEDs）正在成为下一代电致发光器件的理想候选材料。然而，由于 PeNCs 的稳定性较差，其实际应用受到了限制。在这里，我们展示了一种由熵驱动的 CsCd0.1Pb0.8Sr0.1Br3 PeNCs 作为发射极的高效稳定 PeLED。根据采用化合物能量形式主义（CEF）模型进行的密度泛函理论（DFT）计算，同时掺入多种元素会增加 PeNCs 的熵（S），从而提高其稳定性并抑制晶格缺陷。优化后的 PeLED 实现了 22.2% 的最大外部量子效率 (EQE)，大大超过了基于 CsPbBr3 的对照器件（14.1%）。更重要的是，该器件的工作寿命达到了 10 小时，是对照 LED 的 14 倍。

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Efficient and Stable Light-Emitting Diodes Enabled by Entropy-Driven Alloyed Perovskite Nanocrystals

Perovskite nanocrystals (PeNCs)-based light-emitting diodes (PeLEDs) are emerging as promising candidates for next-generation electroluminescent devices. However, their practical application is limited due to the poor stability of PeNCs. Here, we demonstrate an efficient and stable PeLED enabled by entropy-driven CsCd _0.1 Pb _0.8 Sr _0.1 Br ₃ PeNCs as emitter. Based on density functional theory (DFT) calculations with the Compound Energy Formalism (CEF) model, the simultaneous incorporation of multiple elements increases the entropy (S) of PeNCs, thereby enhancing their stability and suppressing lattice defects. The optimized PeLED achieves a maximum external quantum efficiency (EQE) of 22.2%, dramatically surpassing that (14.1%) of the control CsPbBr ₃ -based device. More importantly, the device operating lifetime reaches 10 h, 14-fold higher than that of the control LED.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.