基于双向光致发光晶体管的图像加密、身份验证和光电水印一体机

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-08-21 DOI:10.1109/LED.2024.3446872

Tonglong Zeng;Dingwei Li;Rui Wang;Xiaotao Jing;Wanlin Zhang;Dinghan Zhang;Chen Yan;Peilin Zhang;Xiaohua Ma;Bowen Zhu;Hong Wang;Yue Hao

{"title":"基于双向光致发光晶体管的图像加密、身份验证和光电水印一体机","authors":"Tonglong Zeng;Dingwei Li;Rui Wang;Xiaotao Jing;Wanlin Zhang;Dinghan Zhang;Chen Yan;Peilin Zhang;Xiaohua Ma;Bowen Zhu;Hong Wang;Yue Hao","doi":"10.1109/LED.2024.3446872","DOIUrl":null,"url":null,"abstract":"Herein, In\n2\nO\n3\n/Al\n2\nO\n3\n/Y\n6\n transistors exhibiting bidirectional photoresponse (BPR) characteristic were fabricated. By utilizing this feature, XOR optoelectronic logic gate was successfully designed and applied in near-infrared (NIR) image encryption. Furthermore, an identity verification was proposed by binary encoding the current from different NIR and ultraviolet (UV) illumination combinations. Finally, a photoelectric watermark scheme responsive to UV light was proposed leveraging NIR’s non-volatile programming. The integration of a secure sensor strategy that encompasses image encryption, identity verification, and photoelectric watermark addresses the need for enhanced data protection and offering a comprehensive security solution for the Internet of Things (IoT).","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1859-1862"},"PeriodicalIF":4.1000,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"All-in-One of Image Encryption, Identity Verification, and Photoelectric Watermark Based on Bidirectionally Photoresponsive Transistors\",\"authors\":\"Tonglong Zeng;Dingwei Li;Rui Wang;Xiaotao Jing;Wanlin Zhang;Dinghan Zhang;Chen Yan;Peilin Zhang;Xiaohua Ma;Bowen Zhu;Hong Wang;Yue Hao\",\"doi\":\"10.1109/LED.2024.3446872\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Herein, In\\n2\\nO\\n3\\n/Al\\n2\\nO\\n3\\n/Y\\n6\\n transistors exhibiting bidirectional photoresponse (BPR) characteristic were fabricated. By utilizing this feature, XOR optoelectronic logic gate was successfully designed and applied in near-infrared (NIR) image encryption. Furthermore, an identity verification was proposed by binary encoding the current from different NIR and ultraviolet (UV) illumination combinations. Finally, a photoelectric watermark scheme responsive to UV light was proposed leveraging NIR’s non-volatile programming. The integration of a secure sensor strategy that encompasses image encryption, identity verification, and photoelectric watermark addresses the need for enhanced data protection and offering a comprehensive security solution for the Internet of Things (IoT).\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":\"45 10\",\"pages\":\"1859-1862\"},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-08-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10643092/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10643092/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

在此，我们制作了具有双向光响应（BPR）特性的 In2O3/Al2O3/Y6 晶体管。利用这一特性，成功设计了 XOR 光电逻辑门，并将其应用于近红外图像加密。此外，通过对不同近红外和紫外线（UV）照明组合的电流进行二进制编码，提出了一种身份验证方法。最后，利用近红外的非易失性编程，提出了一种响应紫外线的光电水印方案。集成了图像加密、身份验证和光电水印的安全传感器策略满足了增强数据保护的需求，为物联网（IoT）提供了全面的安全解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

All-in-One of Image Encryption, Identity Verification, and Photoelectric Watermark Based on Bidirectionally Photoresponsive Transistors

Herein, In ₂ O ₃ /Al ₂ O ₃ /Y ₆ transistors exhibiting bidirectional photoresponse (BPR) characteristic were fabricated. By utilizing this feature, XOR optoelectronic logic gate was successfully designed and applied in near-infrared (NIR) image encryption. Furthermore, an identity verification was proposed by binary encoding the current from different NIR and ultraviolet (UV) illumination combinations. Finally, a photoelectric watermark scheme responsive to UV light was proposed leveraging NIR’s non-volatile programming. The integration of a secure sensor strategy that encompasses image encryption, identity verification, and photoelectric watermark addresses the need for enhanced data protection and offering a comprehensive security solution for the Internet of Things (IoT).

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.