通过双异质界面提高α-六硫酚传感器对二氧化氮气体的响应和回收性能

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-09-19 DOI:10.1016/j.sse.2024.109006

{"title":"通过双异质界面提高α-六硫酚传感器对二氧化氮气体的响应和回收性能","authors":"","doi":"10.1016/j.sse.2024.109006","DOIUrl":null,"url":null,"abstract":"<div><div>Organic semiconductor gas sensors of α-hexathiophene (α-6 T) films as active layers with dual heterogeneous interface layers of <em>p</em>-hexabiphenyl and pentacene films are prepared by continuous vacuum evaporation method. The enhanced properties of sensors are achieved by modulating the thickness of the α-6 T films. The sensitivity of 1373 %/ ppm and a theoretical low detection limit of 361 ppb are obtained. The sensors demonstrate fast response and recovery properties of 1.05 and 1.51 min for NO<sub>2</sub> gas of 20 ppm. The improved performance is attributed to the continuity of the interface layers and high adsorption of island-like growth. This approach is effective to improve organic sensors by introducing dual heterogeneous interface and tuning the growth of active layers.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced response and recovery performance of α-hexathiophene sensors for NO2 gas by dual heterogeneous interface\",\"authors\":\"\",\"doi\":\"10.1016/j.sse.2024.109006\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Organic semiconductor gas sensors of α-hexathiophene (α-6 T) films as active layers with dual heterogeneous interface layers of <em>p</em>-hexabiphenyl and pentacene films are prepared by continuous vacuum evaporation method. The enhanced properties of sensors are achieved by modulating the thickness of the α-6 T films. The sensitivity of 1373 %/ ppm and a theoretical low detection limit of 361 ppb are obtained. The sensors demonstrate fast response and recovery properties of 1.05 and 1.51 min for NO<sub>2</sub> gas of 20 ppm. The improved performance is attributed to the continuity of the interface layers and high adsorption of island-like growth. This approach is effective to improve organic sensors by introducing dual heterogeneous interface and tuning the growth of active layers.</div></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124001552\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124001552","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

通过连续真空蒸发法制备了以α-六噻吩（α-6 T）薄膜为活性层、对六联苯和五碳烯薄膜为双异质界面层的有机半导体气体传感器。通过调节 α-6 T 薄膜的厚度，增强了传感器的性能。传感器的灵敏度为 1373 %/ppm，理论检测限低至 361 ppb。对于 20 ppm 的二氧化氮气体，传感器的快速响应和恢复性能分别为 1.05 和 1.51 分钟。性能的提高归功于界面层的连续性和岛状生长的高吸附性。通过引入双异质界面和调整活性层的生长，这种方法可以有效地改进有机传感器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Enhanced response and recovery performance of α-hexathiophene sensors for NO2 gas by dual heterogeneous interface

Organic semiconductor gas sensors of α-hexathiophene (α-6 T) films as active layers with dual heterogeneous interface layers of p-hexabiphenyl and pentacene films are prepared by continuous vacuum evaporation method. The enhanced properties of sensors are achieved by modulating the thickness of the α-6 T films. The sensitivity of 1373 %/ ppm and a theoretical low detection limit of 361 ppb are obtained. The sensors demonstrate fast response and recovery properties of 1.05 and 1.51 min for NO₂ gas of 20 ppm. The improved performance is attributed to the continuity of the interface layers and high adsorption of island-like growth. This approach is effective to improve organic sensors by introducing dual heterogeneous interface and tuning the growth of active layers.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.