{"title":"用于潜光 LED 和高安全性荧光防伪油墨的 Dy3+ 的修正多模态光学特性","authors":"V.P. Veena , S.V. Sajith , R. Akshay Murali , C.K. Shilpa , S.V. Jasira , K.M. Nissamudeen","doi":"10.1016/j.mssp.2024.108947","DOIUrl":null,"url":null,"abstract":"<div><div>Double perovskites of diyttrium magnesium titanate are synthesized by low-temperature combustion method at 1173 K - 4 h, marking a decrease in thermal budget 625 K - 5 h with conventional practice. From the UV–visible spectra, the bandgap is obtained as 3.653 eV. A series of Dy<sup>3+</sup> ions are doped in the crystal lattice giving pure white emission at 353 nm excitation and red emission at 980 nm excitation. The crystal structure is confirmed by FESEM and Raman analysis. The optimal 2 wt% elemental doping is inveterate from the XPS analysis whereas the phosphors remain stable under extreme thermal conditions, realized from the TGA. Further monovalent Li<sup>+</sup>, divalent Sr<sup>2+</sup>, or trivalent Sm<sup>3+</sup> ions are co-doped in the crystal matrix, which chiefly enhances the crystalline, optical, and luminescence properties for Li<sup>+</sup> sensitization. These CIE parameters are amended to ideal white light with coordinates (0.326, 0.333), color temperature of 5819 K, and color purity of 2.5 %, signifying a novel ideal white light emission. Anti-counterfeit inks are prepared using PVA due to the red emission of the phosphor under NIR excitation, distinctive for double wavelength fluorescence printing ink technique to tackle serious counterfeiting.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2000,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Amended multimodal optical properties of Dy3+ for Latent wLED and high-security fluorescence anti-counterfeiting ink\",\"authors\":\"V.P. Veena , S.V. Sajith , R. Akshay Murali , C.K. Shilpa , S.V. Jasira , K.M. Nissamudeen\",\"doi\":\"10.1016/j.mssp.2024.108947\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Double perovskites of diyttrium magnesium titanate are synthesized by low-temperature combustion method at 1173 K - 4 h, marking a decrease in thermal budget 625 K - 5 h with conventional practice. From the UV–visible spectra, the bandgap is obtained as 3.653 eV. A series of Dy<sup>3+</sup> ions are doped in the crystal lattice giving pure white emission at 353 nm excitation and red emission at 980 nm excitation. The crystal structure is confirmed by FESEM and Raman analysis. The optimal 2 wt% elemental doping is inveterate from the XPS analysis whereas the phosphors remain stable under extreme thermal conditions, realized from the TGA. Further monovalent Li<sup>+</sup>, divalent Sr<sup>2+</sup>, or trivalent Sm<sup>3+</sup> ions are co-doped in the crystal matrix, which chiefly enhances the crystalline, optical, and luminescence properties for Li<sup>+</sup> sensitization. These CIE parameters are amended to ideal white light with coordinates (0.326, 0.333), color temperature of 5819 K, and color purity of 2.5 %, signifying a novel ideal white light emission. Anti-counterfeit inks are prepared using PVA due to the red emission of the phosphor under NIR excitation, distinctive for double wavelength fluorescence printing ink technique to tackle serious counterfeiting.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.2000,\"publicationDate\":\"2024-09-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800124008436\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124008436","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Amended multimodal optical properties of Dy3+ for Latent wLED and high-security fluorescence anti-counterfeiting ink
Double perovskites of diyttrium magnesium titanate are synthesized by low-temperature combustion method at 1173 K - 4 h, marking a decrease in thermal budget 625 K - 5 h with conventional practice. From the UV–visible spectra, the bandgap is obtained as 3.653 eV. A series of Dy3+ ions are doped in the crystal lattice giving pure white emission at 353 nm excitation and red emission at 980 nm excitation. The crystal structure is confirmed by FESEM and Raman analysis. The optimal 2 wt% elemental doping is inveterate from the XPS analysis whereas the phosphors remain stable under extreme thermal conditions, realized from the TGA. Further monovalent Li+, divalent Sr2+, or trivalent Sm3+ ions are co-doped in the crystal matrix, which chiefly enhances the crystalline, optical, and luminescence properties for Li+ sensitization. These CIE parameters are amended to ideal white light with coordinates (0.326, 0.333), color temperature of 5819 K, and color purity of 2.5 %, signifying a novel ideal white light emission. Anti-counterfeit inks are prepared using PVA due to the red emission of the phosphor under NIR excitation, distinctive for double wavelength fluorescence printing ink technique to tackle serious counterfeiting.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.