通过与 In3+ 离子和聚合物协同封装增强 CsPbBr3 量子点的防潮性能

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2024-09-23 DOI:10.1016/j.mssp.2024.108949

Qiu-Chen Yu, Xiu-Quan Gu, Feng Tong, Zheng Chen, Sheng Huang

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引用次数: 0

摘要

由于具有诱人的气体传感性能和较低的制造成本，过氧化物气体传感器具有非常广阔的市场前景和应用潜力。然而，目前的环境稳定性是阻碍其广泛应用的一大挑战。本研究采用简单的室温合成方法制备了包光体量子点（PQDs），并用配体 In(Acac)3 对其表面缺陷进行了钝化修饰。加入乙烯-醋酸乙烯酯（EVA）可保护 QDs 免受氧气和湿气的侵蚀。研究了 EVA 含量对传感器性能的影响。当 EVA 的最佳比例为 3% 时，传感器在室温（RT）下的反应灵敏度为 0.25-80 ppm CH3OH 气体，检测限约为 3 ppm，稳定性超过 40 天。与 CsPbBr3 传感器相比，CsPbBr3-In/EVA 传感器在气敏响应和持久性方面都有显著提高。该器件能有效抵抗潮湿气体的干扰，即使在相对湿度为 90% 的条件下也能保持灵敏度，解决了目前 PQD 器件防潮性差的问题。这种双重策略有助于开发更精确、更耐用的传感解决方案，满足了该领域的关键需求。

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Enhanced moisture resistance performance of CsPbBr3 quantum dots through synergetic encapsulation with In3+ ions and polymer

Perovskite gas sensors have a very broad market prospect and application potential due to their attractive gas sensing performance and low manufacturing cost. However, the current environmental stability of perovskites is a major challenge that hinders their widespread application. In this study, Perovskite quantum dots (PQDs) were prepared by a simple room-temperature synthesis method and modified with a ligand In(Acac)₃ to passivate their surface defects. Ethylene-vinyl acetate (EVA) was added to protect the QDs from oxygen and moisture. The effect of EVA contents on the sensor performance was investigated. At the optimal ratio of 3 % EVA, the sensor exhibited a response sensitivity of 0.25–80 ppm CH₃OH gas at room temperature (RT) and the detection limit was around 3 ppm, with a stability of over 40 days. Compared to the CsPbBr₃ sensor, the CsPbBr₃-In/EVA sensor showed a significant improvement in the gas-sensitive response and persistence. The device can resist the interference of wet gas effectively and maintained sensitivity even at 90 % RH, solving the problem of poor moisture resistance of current PQDs. This dual strategy contributes to the advancement of more precise and durable sensing solutions, addressing a critical need in the field.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.