Xiaoqing Liu, Yang Liu, Yan Liu, Yaolan Tian, Qingbo Li, Xian Zhao
{"title":"通过电子辐照和随后的退火制备和转化 4H-SiC 中的色心","authors":"Xiaoqing Liu, Yang Liu, Yan Liu, Yaolan Tian, Qingbo Li, Xian Zhao","doi":"10.1039/d4tc03000a","DOIUrl":null,"url":null,"abstract":"Achieving color center preparation with deterministic type and controllable concentration is crucial for quantum applications, such as quantum sensing and quantum communication. Numerous defects can be introduced in 4<em>H</em>-silicon carbide (4<em>H</em>-SiC), and they are capable of undergoing transformations under specific circumstances. Exploring defects’ transformation conditions is essential for optimizing the color center preparation parameters. Herein, the preparation and transformation of color centers in 4<em>H</em>-SiC by electron irradiation and subsequent annealing treatment are investigated. Firstly, silicon vacancy was prepared using electron irradiation (2 MeV and 10 MeV, 10<small><sup>14</sup></small>–10<small><sup>17</sup></small> e cm<small><sup>−2</sup></small>). Subsequently, a phenomenon of silicon vacancy conversion to carbon antisite vacancy pairs (CAV) was discovered in the 2 MeV 10<small><sup>16</sup></small> e cm<small><sup>−2</sup></small> sample. Then, a comparison was made between the defect transformation caused by irradiation and annealing, and it was found that the former was not as thorough as the latter, accompanied by two unknown intermediate states, but they could ultimately be eliminated by annealing. Finally, the preparation conditions for silicon vacancy and CAV were optimized, with 2 MeV irradiation being effective for preparing CAV, whereas 10 MeV irradiation yields a higher quantity of silicon vacancy. Our findings serve as a crucial step in the preparation of color centers and lay the foundation for the application of color centers in quantum field.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7000,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Preparation and transformation of color centers in 4H-SiC by electron irradiation and subsequent annealing\",\"authors\":\"Xiaoqing Liu, Yang Liu, Yan Liu, Yaolan Tian, Qingbo Li, Xian Zhao\",\"doi\":\"10.1039/d4tc03000a\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Achieving color center preparation with deterministic type and controllable concentration is crucial for quantum applications, such as quantum sensing and quantum communication. Numerous defects can be introduced in 4<em>H</em>-silicon carbide (4<em>H</em>-SiC), and they are capable of undergoing transformations under specific circumstances. Exploring defects’ transformation conditions is essential for optimizing the color center preparation parameters. Herein, the preparation and transformation of color centers in 4<em>H</em>-SiC by electron irradiation and subsequent annealing treatment are investigated. Firstly, silicon vacancy was prepared using electron irradiation (2 MeV and 10 MeV, 10<small><sup>14</sup></small>–10<small><sup>17</sup></small> e cm<small><sup>−2</sup></small>). Subsequently, a phenomenon of silicon vacancy conversion to carbon antisite vacancy pairs (CAV) was discovered in the 2 MeV 10<small><sup>16</sup></small> e cm<small><sup>−2</sup></small> sample. Then, a comparison was made between the defect transformation caused by irradiation and annealing, and it was found that the former was not as thorough as the latter, accompanied by two unknown intermediate states, but they could ultimately be eliminated by annealing. Finally, the preparation conditions for silicon vacancy and CAV were optimized, with 2 MeV irradiation being effective for preparing CAV, whereas 10 MeV irradiation yields a higher quantity of silicon vacancy. Our findings serve as a crucial step in the preparation of color centers and lay the foundation for the application of color centers in quantum field.\",\"PeriodicalId\":84,\"journal\":{\"name\":\"Journal of Materials Chemistry C\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":5.7000,\"publicationDate\":\"2024-09-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Chemistry C\",\"FirstCategoryId\":\"1\",\"ListUrlMain\":\"https://doi.org/10.1039/d4tc03000a\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://doi.org/10.1039/d4tc03000a","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Preparation and transformation of color centers in 4H-SiC by electron irradiation and subsequent annealing
Achieving color center preparation with deterministic type and controllable concentration is crucial for quantum applications, such as quantum sensing and quantum communication. Numerous defects can be introduced in 4H-silicon carbide (4H-SiC), and they are capable of undergoing transformations under specific circumstances. Exploring defects’ transformation conditions is essential for optimizing the color center preparation parameters. Herein, the preparation and transformation of color centers in 4H-SiC by electron irradiation and subsequent annealing treatment are investigated. Firstly, silicon vacancy was prepared using electron irradiation (2 MeV and 10 MeV, 1014–1017 e cm−2). Subsequently, a phenomenon of silicon vacancy conversion to carbon antisite vacancy pairs (CAV) was discovered in the 2 MeV 1016 e cm−2 sample. Then, a comparison was made between the defect transformation caused by irradiation and annealing, and it was found that the former was not as thorough as the latter, accompanied by two unknown intermediate states, but they could ultimately be eliminated by annealing. Finally, the preparation conditions for silicon vacancy and CAV were optimized, with 2 MeV irradiation being effective for preparing CAV, whereas 10 MeV irradiation yields a higher quantity of silicon vacancy. Our findings serve as a crucial step in the preparation of color centers and lay the foundation for the application of color centers in quantum field.
期刊介绍:
The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study:
Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability.
Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine.
Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices.
Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive.
Bioelectronics
Conductors
Detectors
Dielectrics
Displays
Ferroelectrics
Lasers
LEDs
Lighting
Liquid crystals
Memory
Metamaterials
Multiferroics
Photonics
Photovoltaics
Semiconductors
Sensors
Single molecule conductors
Spintronics
Superconductors
Thermoelectrics
Topological insulators
Transistors