Jonghoon Shin, Dong Hoon Shin, Kyung Do Kim, Haengha Seo, Kun Hee Ye, Jeong Woo Jeon, Tae Kyun Kim, Heewon Paik, Haewon Song, Suk Hyun Lee, Jung-Hae Choi and Cheol Seong Hwang
{"title":"ZrO2 薄膜中具有场循环的场诱导铁电效应临界电场的可逆调制","authors":"Jonghoon Shin, Dong Hoon Shin, Kyung Do Kim, Haengha Seo, Kun Hee Ye, Jeong Woo Jeon, Tae Kyun Kim, Heewon Paik, Haewon Song, Suk Hyun Lee, Jung-Hae Choi and Cheol Seong Hwang","doi":"10.1039/D4TC03024A","DOIUrl":null,"url":null,"abstract":"<p >This study investigates the effects of field-cycling on the critical electric fields (<em>E</em><small><sub>t→PO</sub></small> and <em>E</em><small><sub>PO→t</sub></small>) of the field-induced ferroelectric (FFE) effect in atomic layer deposited ZrO<small><sub>2</sub></small> thin films, focusing on their reversibility and temperature dependence. High-field cycling decreases these critical fields, whereas subsequent lower-field cycling effectively rejuvenates them, challenging the previous report of their irreversibility. Elevated temperature experiments reveal that higher temperature increases the lower limit of <em>E</em><small><sub>t→PO</sub></small> reduction, corroborating the thermodynamic predictions of the Landau–Ginzburg–Devonshire (LGD) theory. The rejuvenation effect is also more pronounced at higher temperatures, further corroborating the LGD theory. This study highlights that these reversible transitions between polar and non-polar phases with high- and low-field cycling are a universal phenomenon in fluorite-structured materials, not limited to ferroelectric materials. These findings provide new insights into the field-cycling and temperature-dependent behavior of FFE thin films.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7000,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO2 thin films†\",\"authors\":\"Jonghoon Shin, Dong Hoon Shin, Kyung Do Kim, Haengha Seo, Kun Hee Ye, Jeong Woo Jeon, Tae Kyun Kim, Heewon Paik, Haewon Song, Suk Hyun Lee, Jung-Hae Choi and Cheol Seong Hwang\",\"doi\":\"10.1039/D4TC03024A\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >This study investigates the effects of field-cycling on the critical electric fields (<em>E</em><small><sub>t→PO</sub></small> and <em>E</em><small><sub>PO→t</sub></small>) of the field-induced ferroelectric (FFE) effect in atomic layer deposited ZrO<small><sub>2</sub></small> thin films, focusing on their reversibility and temperature dependence. High-field cycling decreases these critical fields, whereas subsequent lower-field cycling effectively rejuvenates them, challenging the previous report of their irreversibility. Elevated temperature experiments reveal that higher temperature increases the lower limit of <em>E</em><small><sub>t→PO</sub></small> reduction, corroborating the thermodynamic predictions of the Landau–Ginzburg–Devonshire (LGD) theory. The rejuvenation effect is also more pronounced at higher temperatures, further corroborating the LGD theory. This study highlights that these reversible transitions between polar and non-polar phases with high- and low-field cycling are a universal phenomenon in fluorite-structured materials, not limited to ferroelectric materials. These findings provide new insights into the field-cycling and temperature-dependent behavior of FFE thin films.</p>\",\"PeriodicalId\":84,\"journal\":{\"name\":\"Journal of Materials Chemistry C\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":5.7000,\"publicationDate\":\"2024-09-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Chemistry C\",\"FirstCategoryId\":\"1\",\"ListUrlMain\":\"https://pubs.rsc.org/en/content/articlelanding/2024/tc/d4tc03024a\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2024/tc/d4tc03024a","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO2 thin films†
This study investigates the effects of field-cycling on the critical electric fields (Et→PO and EPO→t) of the field-induced ferroelectric (FFE) effect in atomic layer deposited ZrO2 thin films, focusing on their reversibility and temperature dependence. High-field cycling decreases these critical fields, whereas subsequent lower-field cycling effectively rejuvenates them, challenging the previous report of their irreversibility. Elevated temperature experiments reveal that higher temperature increases the lower limit of Et→PO reduction, corroborating the thermodynamic predictions of the Landau–Ginzburg–Devonshire (LGD) theory. The rejuvenation effect is also more pronounced at higher temperatures, further corroborating the LGD theory. This study highlights that these reversible transitions between polar and non-polar phases with high- and low-field cycling are a universal phenomenon in fluorite-structured materials, not limited to ferroelectric materials. These findings provide new insights into the field-cycling and temperature-dependent behavior of FFE thin films.
期刊介绍:
The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study:
Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability.
Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine.
Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices.
Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive.
Bioelectronics
Conductors
Detectors
Dielectrics
Displays
Ferroelectrics
Lasers
LEDs
Lighting
Liquid crystals
Memory
Metamaterials
Multiferroics
Photonics
Photovoltaics
Semiconductors
Sensors
Single molecule conductors
Spintronics
Superconductors
Thermoelectrics
Topological insulators
Transistors