等离子体克尔工艺用于带有 FeND-HfO2 栅极绝缘体的 MFSFET 的电导控制

IF 4.6 Q2 MATERIALS SCIENCE, BIOMATERIALS

ACS Applied Bio Materials Pub Date : 2024-09-18 DOI:10.1109/JEDS.2024.3462930

S. Ohmi;M. Tanuma;J.W. Shin

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引用次数: 0

摘要

在这项研究中，我们利用 5 nm 厚的铁电非掺杂 $\rm HfO_{2}$ (FeND-HfO2) 栅极绝缘体研究了金属-铁电-硅场效应晶体管 (MFSFET) 的电导控制。在通过射频-磁控溅射原位沉积 FeND-HfO2 和铂栅电极的过程中，Kr-等离子体工艺比 Ar-等离子体工艺能有效减少等离子体损伤。实现了小于 20 mV 的精确控制，从而在 $\mathbf {\pm 3}$ V/100 ns 的输入脉冲下，对 10 个状态（从 0 到 $0.6~\mu $ S/ $\mu $ m）进行了电导控制，包括电位和抑制操作。

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Kr-Plasma Process for Conductance Control of MFSFET With FeND-HfO₂ Gate Insulator

In this work, we have investigated the conductance control of the metal-ferroelectrics-Si field-effect transistor (MFSFET) utilizing 5 nm thick ferroelectric nondoped

$\rm HfO_{2}$

(FeND-HfO2) gate insulator. The Kr-plasma process is effective to decrease the plasma damage compared to the Ar-plasma process during the in-situ deposition of FeND-HfO2 and Pt gate electrode by RF-magnetron sputtering. The precise control such as less than 20 mV was realized which led to the conductance control for 10 states from 0 to

$0.6~\mu $

$\mu $

m both for potentiation and depression operations with the input pulses of

$\mathbf {\pm 3}$

V/100 ns.

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