Fine-tuning Cesium lead chloride perovskite field-effect transistors for sensing applications: Bridging numerical modeling and experimental validation

This study presents a comprehensive approach to fine-tuning Cesium Lead Chloride Perovskite Field-Effect Transistors (CsPbCl₃-FETs) for sensing applications by bridging numerical modeling with experimental validation. By combining finite element methods in COMSOL Multiphysics for optimization, we tailored FET parameters such as oxide and perovskite thin film thickness. The fabricated FET, with a 200 nm semiconductor layer and 30 nm oxide thickness, was strategically chosen to operate in a non-depletion mode, maximizing mobility while minimizing power consumption. Experimental results closely aligned with numerical simulations, showcasing a threshold voltage of 0.50 V±0.07 V and an impressive on/off current ratio of 1.50 x 10⁴ ± 0.3 x 10⁴. Notably, the perovskite FET exhibited remarkable carrier mobility in saturation mode, reaching 5.40 cm²/V-s ± 0.8 cm²/V-s, outperforming other attempts in the literature. This work underscores the potential of CsPbCl₃ FETs for high-performance sensing applications, offering insights into optimizing device parameters for enhanced functionality and efficiency.