在 300 毫米晶圆上定向蚀刻用于互连应用的无屏障镍铝线

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-08-23 DOI:10.1109/LED.2024.3449219

Souvik Kundu;J.-P. Soulié;G. Marti;F. U. Okudur;Shreya Kundu;L. Souriau;F. Lazzarino;G. Murdoch;S. Park;Z. Tőkei

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引用次数: 0

摘要

这封信展示了在 300 毫米全晶圆上制造 100nm 金属间距互连器件的 20nm 无屏障 NiAl 的功能。我们开发了一种与工业相关的集成路线，包括通过反应离子蚀刻技术对 SiN 硬掩模进行图案化，以及通过离子束蚀刻技术对 NiAl 进行定向蚀刻。结果发现，NiAl 的电阻率接近 Ru，电子成品率达到 99%，整个晶片的均匀性令人印象深刻，而且没有观察到桥接或线路塌陷现象。

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Directional Etching of Barrierless NiAl Lines on 300-mm Wafers for Interconnects Applications

This letter demonstrates the functionality of barrier-less 20nm NiAl for 100nm metal pitch interconnects fabricated on 300mm full wafers. We have developed an industry-relevant integration route consisting of a SiN hard mask patterned by reactive ion etching and directional NiAl etching by ion beam etch techniques. The resistivity for NiAl is found to be close to Ru, along with 99% electrical yield, impressive uniformity across the full wafer, and no bridging or line collapsing was observed.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.