通过金属-H 键合的有利耦合效应实现 a-IGZTO 晶体管对漏极诱导的势垒降低效应的超常免疫力

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-08-27 DOI:10.1109/led.2024.3450659

Gwang-Bok Kim, Se Eun Kim, Yena Kim, Kyeong-Seok Son, Joon Seok Park, Sunhee Lee, Jae Kyeong Jeong

引用次数: 0

摘要

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Exceptional Immunity of Drain-Induced Barrier Lowering Effect in a-IGZTO Transistors via Favorable Coupling Effects of Metal-H Bonding

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.