利用神经网络优化垂直 NAND 闪存的编程脉冲形状

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-08-28 DOI:10.1109/LED.2024.3451430

Sung-Ho Park;Jaehyeon Kim;Jonghyun Ko;Jiseong Im;Yeongheon Yang;Jae-Joon Kim;Jong-Ho Lee

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引用次数: 0

摘要

在垂直 NAND（V-NAND）闪存的增量阶跃脉冲编程（ISPP）过程中，我们利用神经网络（NN）优化脉冲形状，以最大限度地提高阈值电压（${V}_\text {th}}\text {）}$。神经网络使用商用 V-NAND 闪存的 ${V}_{text {th}}$ 在随机编程脉冲 (PP) 作用下的增加数据进行训练。经过训练的 NN 可用于优化 PP 的形状。通过测量证实了优化后的PP能改善${V}_{text {th}}$ 增加的原理以及改善结果。将优化后的PP应用于ISPP运行时，ISPP斜率提高了37%。此外，优化后的PP显示出更低的程序干扰，这表明编程速度更快，能耗更低。

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Optimization of Programming Pulse Shape for Vertical NAND Flash Memory Using Neural Networks

We optimize the shape of the pulse to maximally increase threshold voltage (

${V}_{\text {th}}\text {)}$

during the incremental step pulse programming (ISPP) of vertical NAND (V-NAND) flash memory using neural networks (NNs). NN is trained using data on the increase in

${V}_{\text {th}}$

of commercial V-NAND flash memory in response to randomly shaped programming pulses (PPs). The trained NN is utilized to optimize the shape of the PP. The principle behind the improvement in

${V}_{\text {th}}$

increase due to the optimized PP, as well as the improvement results, are confirmed through measurements. When the optimized PP is applied to ISPP operation, it results in a 37% increase in ISPP slope. Furthermore, the optimized PP exhibits lower program disturbance, indicating the potential for faster programming with lower energy consumption.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.