利用新型双脊交错叶片结构实现大功率片束 TWT 的超宽带运行

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-09-04 DOI:10.1109/LED.2024.3454267

Zihao Dai;Jianxun Wang;Yixin Wan;Xinjie Li;Jingzhi Zheng;Yuan Fang;Hao Li;Yong Luo

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引用次数: 0

摘要

为了打破传统 SB-TWT 在高功率工作时的带宽限制，我们提出并验证了一种创新的双脊交错叶片（DRSV）结构，它是毫米波和太赫兹超宽带大功率 TWT 的有效解决方案。DRSV 基于交错双叶片慢波结构（SDV-SWS），并在两侧引入了侧槽，从而改变了电路特性。这种新颖的 SWS 可在保持高功率输出的同时显著扩展工作带宽。此外，结合全周期相位速度渐变优化方法，还能进一步提高带宽和效率。此外，还对色散特性进行了实验验证。结果表明，3-dB 带宽超过 13.5 GHz，从 20 GHz 到 33.5 GHz，相对带宽为 50.5%。

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Achieving Ultra-Wide Band Operation of the High-Power Sheet Beam TWT by Using Novel Double-Ridge Staggered Vane Structure

To break limitation in the bandwidth of traditional SB-TWTs at high power of its operation, an innovative Double-Ridge Staggered Vane (DRSV) Structure is proposed and verified as an effective solution for ultra-wideband high-power TWT in the millimeter wave and terahertz. DRSV is based on the staggered double-vane slow-wave structure (SDV-SWS) and introduces side slots on both sides, which changes the circuit characteristics. This novel SWS allows for a significant expansion in operating bandwidth while maintaining high power output. In addition, combined with an all-period phase velocity tapering optimization method, the bandwidth and efficiency can be further improved.The ultra-wideband amplification characteristics were verified using particle in-cell (PIC) simulations at Ka-band. Additionally, experimental validation was performed on the dispersion properties. The results demonstrate that the 3-dB bandwidth surpasses 13.5 GHz, ranging from 20 to 33.5 GHz, corresponding to a relative bandwidth of 50.5%.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.