基于亚太赫兹波段 V 形正交光栅波导的新型双板束后向波振荡器

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-09-04 DOI:10.1109/LED.2024.3454508

Xinlun Xie;Guoxiang Shu;Jiacai Liao;Huaxing Pan;Shaochen Ma;Jiawei Tang;Siyuan Liu;Mingze Li;Wenlong He

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引用次数: 0

摘要

本信介绍了一种亚太赫兹波段双片光束后向波振荡器（BWO），该振荡器具有宽可调带宽和更强的辐射功率。该设计包括两项关键创新：1）提出了一种工作在 TM $_{{21}}^{text {++}$高阶模式（++表示两个波束隧道区域内的电场矢量同相）的新型 V 形正交光栅波导（VOGW），与传统的 OGW 相比，它具有更高的耦合阻抗；2）设计了一种具有锥形过渡的新型 E 平面 L 弯过编码耦合器，用于高效提取 TM $_{{21}}^{text {++}$模式的功率。为了进行验证，制作了一个由 40 周期 VOGW 和两个相同耦合器组成的相互作用电路，测量结果与考虑了传导损耗和装配误差的仿真预测结果非常吻合。针对这种创新型 BWO 的 PIC 仿真预测，在 246.8-265.6 GHz 频率范围内的稳定辐射功率为 182.4-317.5 W，与基于 OGW 的 BWO 相比，功率增加了 43 W（约 15%）。

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A Novel Dual-Sheet-Beam Backward Wave Oscillator Based on Sub-Terahertz Band V-Shaped Orthogonal Grating Waveguide

A sub-terahertz band dual-sheet-beam backward wave oscillator (BWO) highlighted with wide tunable bandwidth and enhanced radiation power is presented in this letter. This design includes two key innovations: 1) a novel V-shaped orthogonal grating waveguide (VOGW) operating in TM

$_{{21}}^{\text {++}}$

high-order mode (++ represents the electric field vectors within two beam tunnel regions are in-phase) is proposed, which exhibits higher coupling impedance compared with the traditional OGW; 2) a novel E-plane L-bend overmoded coupler with a tapered transition is designed for efficient power extraction of the TM

$_{{21}}^{\text {++}}$

mode. For verification, an interaction circuit made of 40-period VOGW and two identical couplers was fabricated, and the measured results agreed well with simulation predictions having considered conduct loss and assembly errors. PIC simulation for this innovative BWO predicts a stable radiation power of 182.4-317.5 W across 246.8-265.6 GHz, demonstrating a power increment of up to 43 W (~15%) in comparison to the OGW based BWO.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.