碘掺杂增强 C8-BTBT 场效应晶体管的迁移率

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-09-09 DOI:10.1109/LED.2024.3449560

Liangjun Wang;Caifang Gao;Siyuan Ruan;Jialin Yang;Shanshan Liang;Chang Yang;Wenwu Li

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引用次数: 0

摘要

有机场效应晶体管（OFET）广泛应用于柔性显示器和可穿戴设备领域。然而，其迁移率的优化是一个主要瓶颈。在这里，通过掺杂碘，有机二辛基苯并噻吩-烯-苯并噻吩（C8-BTBT）场效应晶体管的迁移率得到了增强。通过优化掺杂浓度，金属/半导体界面上的载流子浓度因隧道效应而显著增加，产生的接触电阻（R $_{\text {C}}\text {）}$降低了 $\sim 10^{{2}}$，迁移率从 1.4 cm2V $^{-{1}}$ s $^{-{1}}$ 增加到 10.4 cm2V $^{-{1}}$ 。这项工作提出了一种提高 C8-BTBT OFET 迁移率的有效方法。

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Enhanced Mobility in C8-BTBT Field-Effect Transistors With Iodine-Doping

Organic field-effect transistors (OFETs) are widely applied in the fields of flexible display and wearable devices. However, its mobility optimization is a major bottleneck. Here, enhanced mobility in organic dioctylbenzothienob en-zothiophene (C8-BTBT) OFETs is demonstrated with iodine doping. By optimizing the doping concentration, the carrier concentration at the metal/semiconductor interface markedly increases due to tunneling effects, generating a contact resistance (R

$_{\text {C}}\text {)}$

reduced by

$\sim 10^{{2}}$

, and increasing mobility from 1.4 to 10.4 cm ² V

$^{-{1}}$

. This work proposes an effective method to enhance the mobility of C8-BTBT OFETs.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.