基于共形加载元面滤波器的行波管高阶模式抑制技术

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-09-06 DOI:10.1109/LED.2024.3455336

Gaoli Xiang;Zhigang Lu;Peng Gao;Jingrui Duan;Yuan Zheng;Zhanliang Wang;Shaomeng Wang;Huarong Gong;Yubin Gong

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引用次数: 0

摘要

高阶模式（HOM）振荡可能会影响行波管（TWT）的稳定性，为了解决这一问题，有人提出了一种新策略，即保形加载元表面滤波器（MF）。通过在波导型慢波结构（SWS）中加载 MF，MF 的频率选择传输特性可以将工作模式限制在 SWS 中，而将非工作模式传输出去。因此，即使满足同步条件，HOM 的振幅也会受到限制，从而降低 HOM 震荡的风险。以交错双光栅慢波结构（SDG-SWS）为例，验证了该策略的有效性。此外，MF 易于制造，因此在大功率和高频太赫兹放大器中具有广阔的应用前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High-Order Mode Suppression in Traveling Wave Tube Based on Conformally Loaded Metasurface Filter

In order to address the high-order mode (HOM) oscillation that may affect the stability of traveling wave tubes (TWTs), a new strategy called conformally loaded metasurface filter (MF) has been proposed. By loading MF into the waveguide type slow wave structure (SWS), the frequency-selective transmission properties of MF can confine the operating mode in the SWS, while the nonoperating modes are transmitted out. Therefore, the amplitude of HOMs is limited, even if synchronization conditions are met, thereby, the risk of HOM oscillation is reduced. Taking the staggered double grating slow wave structure (SDG-SWS) as an example, the effectiveness of the strategy was verified. In addition, MF is easy to manufacture, which makes it have promising applications in high-power and high-frequency THz amplifiers.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.