基于拉什巴自旋轨道耦合调制层状半导体量子微结构的空间电子-自旋分离器

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-09-04 DOI:10.1109/LED.2024.3454235

Mao-Wang Lu;Sai-Yan Chen;Xue-Li Cao;An-Qi Zhang

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引用次数: 0

摘要

本文探讨了层状半导体量子微结构中电子的古斯-海因效应。由于拉什巴自旋轨道耦合，GH偏移明显取决于电子自旋，从而导致空间域的动态自旋极化。此外，这种自旋极化还可以受到界面电场或层厚度的调制。这些有趣的发现可能有助于空间电子自旋分离器的设计。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Spatial Electron-Spin Splitter Based on Rashba Spin-Orbit-Coupling Modulated Layered-Semiconductor Quantum Microstructure

Goos-Hänchen effect of electrons in a layered semiconductor quantum microstructure is explored. Thanks to Rashba spin-orbit coupling, GH shifts depend obviously on electron spins, causing the dynamic spin polarization in the spatial domain. Besides, this spin polarization can be modulated by the interfacial electric field or the layer thickness. These interesting findings may be helpful for design of the spatial electron-spin splitter.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.