通过 XGBoost 和 SHAP 分析 FinFET 中源极/漏极生长高度和侧向生长深度的影响

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-08-23 DOI:10.1109/LED.2024.3449243

Seung Won Lee;Hak Jun Ban;Jong Kyung Park;Dong Jin Ji;Seul Ki Hong

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引用次数: 0

摘要

在鳍式场效应晶体管中，源极/漏极的形状对性能至关重要，因为它提供电荷并在沟道中产生应力。由于 FinFET 的三维结构和众多元件，通过实验分析源极/漏极形状对性能的影响既费时又费钱。本研究采用机器学习和 SHAP 方法分析源极/漏极形状对 FinFET 性能的影响，重点关注生长高度和横向生长深度。这些因素对导通电流和阈值电压等关键性能指标的影响得到了证实。SHAP 分析进一步证实了结果的可靠性和重要性。我们的研究结果有助于理解和提高日益复杂和微型化的半导体器件结构的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analyzing the Influence of Source/Drain Growth Height and Lateral Growth Depth in FinFETs Through XGBoost and SHAP

In FinFETs, the shape of the source/drain is crucial for performance, as it supplies charge and induces stress in the channel. Due to the 3D structure and numerous components of FinFETs, experimentally analyzing the performance impact of source/drain shapes is time-consuming and costly. This study employs machine learning and the SHAP method to analyze the influence of source/drain shapes on FinFET performance, focusing on growth height and lateral growth depth. These factors’ effects on key performance indicators such as on-current and threshold voltage are confirmed. SHAP analysis further substantiates the results’ reliability and significance. Our findings contribute to understanding and improving the performance of increasingly complex and miniaturized semiconductor device structures.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.