在 ZrO2/HfO2/ZrO2 结构中引入可控界面层以增强 ZrO2 的模板效应

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-08-23 DOI:10.1109/LED.2024.3449150

Woo Young Park;In Gyu Lee;Young Uk Ryu;Woojin Jeon

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引用次数: 0

摘要

研究人员采用一种新方法，利用可控界面层（CIL）调节 ZrO2/HfO2/ZrO2 (ZHZ) 结构中的 HfO2 薄膜结晶。通过 X 射线衍射和高分辨率透射电子显微镜观察，CIL 可抑制 HfO2 中不希望出现的单斜相，有利于实现高介电常数所需的四方相。通过 CIL 对 HfO2 厚度的精确控制，可以在整个 ZHZ 结构中保持恒定的介电常数，从而解决介电常数波动的难题。这项研究凸显了 CIL 在电子器件用 ZrO2/HfO2 定制工程方面的潜力，提供了对结晶行为的深入了解，并为先进的器件应用铺平了道路。

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Introducing a Controlled Interfacial Layer to Enhance the Template Effect of ZrO₂ in the ZrO₂/HfO₂/ZrO₂ Structure

A novel approach using a controlled interfacial layer (CIL) to modulate HfO ₂ thin film crystallization in ZrO ₂ /HfO ₂ /ZrO ₂ (ZHZ) structures was investigated. Through X-ray diffraction and high-resolution transmission electron microscopy, the CIL suppresses undesired monoclinic phases in HfO ₂ , favoring the desired tetragonal phase for high dielectric constants. Precise control of HfO ₂ thickness via CIL maintains constant dielectric constants across ZHZ structures, addressing challenges of fluctuating constants. This study highlights CIL’s potential in tailored ZrO ₂ /HfO ₂ engineering for electronics, providing insights into crystallization behavior and paving the way for advanced device applications.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.