High-performance multilevel nonvolatile organic field-effect transistor memory based on multilayer organic semiconductor heterostructures†

Nonvolatile organic field-effect transistor (OFET) memory devices have great potential for next-generation memory due to their advantages of low cost, light weight, mechanical flexibility and easy processing. However, addressing the issue of limited data storage capacity remains a critical challenge. In this study, we propose a multilevel nonvolatile OFET memory device featuring five-layer organic semiconductor heterostructures composed of pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarb-oxylic diimide (P13). The innovative semiconductor heterostructures exhibit quantum well-like characteristics, and efficiently function as charge trapping sites. These characteristics synergize with the charge trapping properties of the polystyrene (PS) layer, resulting in a significant enhancement of the device's charge storage capacity. The organic semiconductor heterostructure-based memory device demonstrates exceptional nonvolatile memory properties, including a large charge storage capacity (5.48 × 10¹² cm⁻²), a high mobility (2.06 cm² V⁻¹ s⁻¹), a high ON/OFF current ratio (10⁵), and a long data retention (over 10⁴ s). Moreover, a four-level data storage was achieved owing to the device's high charge capacity properties, significantly augmenting memory capacity. This research presents a promising methodology for the realization of high-performance organic memory for future technology.