{"title":"氧化石墨烯基记忆晶体管中光电响应的电压控制极性切换","authors":"Soma Saha, Anindya Datta, Tapanendu Kundu","doi":"10.1039/d4tc02812k","DOIUrl":null,"url":null,"abstract":"The electrical and optoelectrical characteristics of graphene oxide thin film have been studied to establish its potential for various device applications. Symmetric nonlinear hysteresis in a current–voltage space, a typical memristor characteristic, has been observed using a planar metal/insulator/metal configuration. The obtained current–voltage behavior of the device has been visualized based on the voltage-dependent contributions from various charge carriers in the presence of different trap sites in the fabricated thin film. The uniqueness of this device's characteristics is to show a bias voltage-dependent polarity switching of photoresponse under illumination, and this photoswitching occurs through a switching voltage point (∼2 V). The time dynamics of this photocurrent reveal that under a low bias voltage (<2 V), the device shows capacitive memristor characteristics. The exponentially growing photocurrent is additive in nature, and the device shows the photoresponse having a time constant of ∼2 s at +1 V. As bias voltage increases (>2 V), another current appears opposite to the normal photocurrent that depends on the bias voltage and intensity of illumination. A detailed analysis of the time dynamics of photoresponse reveals that the time constant of this current changes from ∼9 s (+2 V) to ∼5 s (+4 V). The observed photoswitching is due to different time constants of these counter-interacting currents, resulting in polarity switching. Here, we attempt to shed light on the fundamental mechanisms that connect the nonlinear, nonzero crossing hysteresis observed in the electrical characteristics with its voltage-dependent photoswitching that can be judicially exploited for conceptualizing graphene oxide-based photonic devices.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7000,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Voltage controlled polarity switching of photoresponse in graphene oxide-based memristor\",\"authors\":\"Soma Saha, Anindya Datta, Tapanendu Kundu\",\"doi\":\"10.1039/d4tc02812k\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical and optoelectrical characteristics of graphene oxide thin film have been studied to establish its potential for various device applications. Symmetric nonlinear hysteresis in a current–voltage space, a typical memristor characteristic, has been observed using a planar metal/insulator/metal configuration. The obtained current–voltage behavior of the device has been visualized based on the voltage-dependent contributions from various charge carriers in the presence of different trap sites in the fabricated thin film. The uniqueness of this device's characteristics is to show a bias voltage-dependent polarity switching of photoresponse under illumination, and this photoswitching occurs through a switching voltage point (∼2 V). The time dynamics of this photocurrent reveal that under a low bias voltage (<2 V), the device shows capacitive memristor characteristics. The exponentially growing photocurrent is additive in nature, and the device shows the photoresponse having a time constant of ∼2 s at +1 V. As bias voltage increases (>2 V), another current appears opposite to the normal photocurrent that depends on the bias voltage and intensity of illumination. A detailed analysis of the time dynamics of photoresponse reveals that the time constant of this current changes from ∼9 s (+2 V) to ∼5 s (+4 V). The observed photoswitching is due to different time constants of these counter-interacting currents, resulting in polarity switching. Here, we attempt to shed light on the fundamental mechanisms that connect the nonlinear, nonzero crossing hysteresis observed in the electrical characteristics with its voltage-dependent photoswitching that can be judicially exploited for conceptualizing graphene oxide-based photonic devices.\",\"PeriodicalId\":84,\"journal\":{\"name\":\"Journal of Materials Chemistry C\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":5.7000,\"publicationDate\":\"2024-08-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Chemistry C\",\"FirstCategoryId\":\"1\",\"ListUrlMain\":\"https://doi.org/10.1039/d4tc02812k\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://doi.org/10.1039/d4tc02812k","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Voltage controlled polarity switching of photoresponse in graphene oxide-based memristor
The electrical and optoelectrical characteristics of graphene oxide thin film have been studied to establish its potential for various device applications. Symmetric nonlinear hysteresis in a current–voltage space, a typical memristor characteristic, has been observed using a planar metal/insulator/metal configuration. The obtained current–voltage behavior of the device has been visualized based on the voltage-dependent contributions from various charge carriers in the presence of different trap sites in the fabricated thin film. The uniqueness of this device's characteristics is to show a bias voltage-dependent polarity switching of photoresponse under illumination, and this photoswitching occurs through a switching voltage point (∼2 V). The time dynamics of this photocurrent reveal that under a low bias voltage (<2 V), the device shows capacitive memristor characteristics. The exponentially growing photocurrent is additive in nature, and the device shows the photoresponse having a time constant of ∼2 s at +1 V. As bias voltage increases (>2 V), another current appears opposite to the normal photocurrent that depends on the bias voltage and intensity of illumination. A detailed analysis of the time dynamics of photoresponse reveals that the time constant of this current changes from ∼9 s (+2 V) to ∼5 s (+4 V). The observed photoswitching is due to different time constants of these counter-interacting currents, resulting in polarity switching. Here, we attempt to shed light on the fundamental mechanisms that connect the nonlinear, nonzero crossing hysteresis observed in the electrical characteristics with its voltage-dependent photoswitching that can be judicially exploited for conceptualizing graphene oxide-based photonic devices.
期刊介绍:
The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study:
Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability.
Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine.
Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices.
Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive.
Bioelectronics
Conductors
Detectors
Dielectrics
Displays
Ferroelectrics
Lasers
LEDs
Lighting
Liquid crystals
Memory
Metamaterials
Multiferroics
Photonics
Photovoltaics
Semiconductors
Sensors
Single molecule conductors
Spintronics
Superconductors
Thermoelectrics
Topological insulators
Transistors