{"title":"退火温度对 C-Ni 薄膜三维表面立体分析的影响","authors":"Vali Dalouji, Nasim Rahimi","doi":"10.1108/ssmt-08-2023-0043","DOIUrl":null,"url":null,"abstract":"<h3>Purpose</h3>\n<p>The purpose of this paper is to study the correlation between the thicknesses of the C–Ni films that have been prepared by RF-magnetron sputtering on quartz substrates and their three-dimensional (3D) micro morphology. In this work by AFM images, this paper studied stereo metric analysis of these films.</p><!--/ Abstract__block -->\n<h3>Design/methodology/approach</h3>\n<p>The C–Ni films have been prepared by RF-magnetron sputtering on quartz substrates using a mosaic target consisting of pure graphite and strips of pure nickel approximately 2 cm<sup>2</sup> attached to the graphite race track. The field emission scanning electronic microscopy (FESEM) images were used for the morphological characterization.</p><!--/ Abstract__block -->\n<h3>Findings</h3>\n<p>The histogram peaks are zero for all samples and the histograms are almost symmetric around zero. Temperature did not have much effect on the degree of isolation, so all four diagrams have similar results. The qualitative observations through statistical parameters of the 3D surface texture revealed that the smoothest surface has been obtained for C-Ni films annealed at 500 °C (Sa, Sq, Sz and Sv have the lower values), while the most irregular topography has been found for C-Ni films annealed at 300 °C (the fractal dimension D = 2.01 ± 0.131).</p><!--/ Abstract__block -->\n<h3>Originality/value</h3>\n<p>As shown in FESEM images, the size of the particles was increased for films deposited from 300 ºC to 800ºC; however, at 1000ºC, it decreased significantly. The histogram peaks are zero for all samples and the histograms were almost symmetric around zero. Also, the largest and lowest root mean heights (Sq) belong to films at 300 °C and 500 °C. Furthermore, the more irregular surface was found at 300 °C, and the more regular surface was found at 500 °C. As the temperature was increased to 800 °C, the values of the IAPSD function increased systematically, and then the values of the IAPSD function was decreased in the fourth sample. The surface skewness of samples annealed at 1000 °C was positive which confirms the lack of dominance of cavities on their surface with the highest amount of C-Ni films at 800 °C.</p><!--/ Abstract__block -->","PeriodicalId":49499,"journal":{"name":"Soldering & Surface Mount Technology","volume":"7 1","pages":""},"PeriodicalIF":1.7000,"publicationDate":"2024-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of annealing temperature on 3D surface stereometric analysis in C-Ni films\",\"authors\":\"Vali Dalouji, Nasim Rahimi\",\"doi\":\"10.1108/ssmt-08-2023-0043\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3>Purpose</h3>\\n<p>The purpose of this paper is to study the correlation between the thicknesses of the C–Ni films that have been prepared by RF-magnetron sputtering on quartz substrates and their three-dimensional (3D) micro morphology. In this work by AFM images, this paper studied stereo metric analysis of these films.</p><!--/ Abstract__block -->\\n<h3>Design/methodology/approach</h3>\\n<p>The C–Ni films have been prepared by RF-magnetron sputtering on quartz substrates using a mosaic target consisting of pure graphite and strips of pure nickel approximately 2 cm<sup>2</sup> attached to the graphite race track. The field emission scanning electronic microscopy (FESEM) images were used for the morphological characterization.</p><!--/ Abstract__block -->\\n<h3>Findings</h3>\\n<p>The histogram peaks are zero for all samples and the histograms are almost symmetric around zero. Temperature did not have much effect on the degree of isolation, so all four diagrams have similar results. The qualitative observations through statistical parameters of the 3D surface texture revealed that the smoothest surface has been obtained for C-Ni films annealed at 500 °C (Sa, Sq, Sz and Sv have the lower values), while the most irregular topography has been found for C-Ni films annealed at 300 °C (the fractal dimension D = 2.01 ± 0.131).</p><!--/ Abstract__block -->\\n<h3>Originality/value</h3>\\n<p>As shown in FESEM images, the size of the particles was increased for films deposited from 300 ºC to 800ºC; however, at 1000ºC, it decreased significantly. The histogram peaks are zero for all samples and the histograms were almost symmetric around zero. Also, the largest and lowest root mean heights (Sq) belong to films at 300 °C and 500 °C. Furthermore, the more irregular surface was found at 300 °C, and the more regular surface was found at 500 °C. As the temperature was increased to 800 °C, the values of the IAPSD function increased systematically, and then the values of the IAPSD function was decreased in the fourth sample. The surface skewness of samples annealed at 1000 °C was positive which confirms the lack of dominance of cavities on their surface with the highest amount of C-Ni films at 800 °C.</p><!--/ Abstract__block -->\",\"PeriodicalId\":49499,\"journal\":{\"name\":\"Soldering & Surface Mount Technology\",\"volume\":\"7 1\",\"pages\":\"\"},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2024-08-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Soldering & Surface Mount Technology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1108/ssmt-08-2023-0043\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Soldering & Surface Mount Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1108/ssmt-08-2023-0043","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
目的本文旨在研究在石英基底上通过射频-磁控溅射制备的 C-Ni 薄膜的厚度与其三维（3D）微观形态之间的相关性。在这项工作中，本文通过原子力显微镜图像研究了这些薄膜的立体度量分析。设计/方法/途径在石英基底上使用射频磁控溅射法制备了 C-Ni 薄膜，使用的镶嵌靶由纯石墨和附着在石墨赛道上的约 2 平方厘米的纯镍条组成。所有样品的直方图峰值均为零，且直方图在零点附近几乎对称。温度对隔离度的影响不大，因此四张图的结果相似。通过对三维表面纹理统计参数的定性观察发现，在 500 °C 下退火的 C-Ni 薄膜表面最光滑（Sa、Sq、Sz 和 Sv 的值较低），而在 300 °C 下退火的 C-Ni 薄膜的地形最不规则（分形维数 D = 2.01 ± 0.131）。原创性/价值 如 FESEM 图像所示，从 300ºC 到 800ºC 沉积的薄膜的颗粒尺寸增大；但在 1000ºC 时，颗粒尺寸显著减小。所有样品的直方图峰值均为零，且直方图在零点附近几乎对称。此外，最大和最小的平均根高（Sq）分别属于 300 °C 和 500 °C 的薄膜。此外，300 °C 时的表面更不规则，而 500 °C 时的表面更规则。当温度升高到 800 ℃ 时，IAPSD 函数的值逐渐增大，然后在第四个样品中 IAPSD 函数的值逐渐减小。在 1000 ℃ 下退火的样品的表面偏斜度为正值，这证实了在 800 ℃ 下 C-Ni 膜含量最高的样品表面缺乏空穴。
Influence of annealing temperature on 3D surface stereometric analysis in C-Ni films
Purpose
The purpose of this paper is to study the correlation between the thicknesses of the C–Ni films that have been prepared by RF-magnetron sputtering on quartz substrates and their three-dimensional (3D) micro morphology. In this work by AFM images, this paper studied stereo metric analysis of these films.
Design/methodology/approach
The C–Ni films have been prepared by RF-magnetron sputtering on quartz substrates using a mosaic target consisting of pure graphite and strips of pure nickel approximately 2 cm2 attached to the graphite race track. The field emission scanning electronic microscopy (FESEM) images were used for the morphological characterization.
Findings
The histogram peaks are zero for all samples and the histograms are almost symmetric around zero. Temperature did not have much effect on the degree of isolation, so all four diagrams have similar results. The qualitative observations through statistical parameters of the 3D surface texture revealed that the smoothest surface has been obtained for C-Ni films annealed at 500 °C (Sa, Sq, Sz and Sv have the lower values), while the most irregular topography has been found for C-Ni films annealed at 300 °C (the fractal dimension D = 2.01 ± 0.131).
Originality/value
As shown in FESEM images, the size of the particles was increased for films deposited from 300 ºC to 800ºC; however, at 1000ºC, it decreased significantly. The histogram peaks are zero for all samples and the histograms were almost symmetric around zero. Also, the largest and lowest root mean heights (Sq) belong to films at 300 °C and 500 °C. Furthermore, the more irregular surface was found at 300 °C, and the more regular surface was found at 500 °C. As the temperature was increased to 800 °C, the values of the IAPSD function increased systematically, and then the values of the IAPSD function was decreased in the fourth sample. The surface skewness of samples annealed at 1000 °C was positive which confirms the lack of dominance of cavities on their surface with the highest amount of C-Ni films at 800 °C.
期刊介绍：
Soldering & Surface Mount Technology seeks to make an important contribution to the advancement of research and application within the technical body of knowledge and expertise in this vital area. Soldering & Surface Mount Technology compliments its sister publications; Circuit World and Microelectronics International.
The journal covers all aspects of SMT from alloys, pastes and fluxes, to reliability and environmental effects, and is currently providing an important dissemination route for new knowledge on lead-free solders and processes. The journal comprises a multidisciplinary study of the key materials and technologies used to assemble state of the art functional electronic devices. The key focus is on assembling devices and interconnecting components via soldering, whilst also embracing a broad range of related approaches.
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