{"title":"采用 22 纳米技术的过剩-1 FinFET 电路的高效单级进位选择加法器","authors":"Jeevan Battini, Sivani Kosaraju","doi":"10.1088/1361-6641/ad6e15","DOIUrl":null,"url":null,"abstract":"Conventional carry select adders (CCSA) have two stages and are followed by multiplexers. CCSAs use ripple carry adders at two stages, which will introduce much delay due to carry propagation. To choose the option between an excess-1 result and a normal result, the CCSA employs a multiplexer. The proposed single-stage carry select adder (SSCSA) has a single stage and uses a new block to generate a normal and excess-1 result based on the readily available inputs (A and B). A novel architecture is developed and specifically designed to improve power dissipation and latency. It relies on a single circuit that produces normal/excess-1 results dependent on input carry. Heterogeneous logic combining CMOS, Dual Value Logic, and Transmission Gate Logic with 22 nm Fin-FETs powers the 1-bit SSCSA circuit. Better circuit regularity is displayed by the 4-bit SSCSA, as it only uses one type of 1-bit SSCSA. With the use of Cadence Virtuoso, ADEL, and ADEXL at 22 nm FinFET technology, all adders, including 4- and 8-bit adders, are designed, simulated, and examined. According to the resulting study, the 4-bit SSCSA outperforms the best adder among existing adders in terms of speed performance and power dissipation by 17.6% and 27.6%, respectively. By comparison with all other designs, SSCSAs outperform them at every corner.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"726 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An efficient single-stage carry select adder using excess-1 FinFET circuit in 22 nm technology\",\"authors\":\"Jeevan Battini, Sivani Kosaraju\",\"doi\":\"10.1088/1361-6641/ad6e15\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Conventional carry select adders (CCSA) have two stages and are followed by multiplexers. CCSAs use ripple carry adders at two stages, which will introduce much delay due to carry propagation. To choose the option between an excess-1 result and a normal result, the CCSA employs a multiplexer. The proposed single-stage carry select adder (SSCSA) has a single stage and uses a new block to generate a normal and excess-1 result based on the readily available inputs (A and B). A novel architecture is developed and specifically designed to improve power dissipation and latency. It relies on a single circuit that produces normal/excess-1 results dependent on input carry. Heterogeneous logic combining CMOS, Dual Value Logic, and Transmission Gate Logic with 22 nm Fin-FETs powers the 1-bit SSCSA circuit. Better circuit regularity is displayed by the 4-bit SSCSA, as it only uses one type of 1-bit SSCSA. With the use of Cadence Virtuoso, ADEL, and ADEXL at 22 nm FinFET technology, all adders, including 4- and 8-bit adders, are designed, simulated, and examined. According to the resulting study, the 4-bit SSCSA outperforms the best adder among existing adders in terms of speed performance and power dissipation by 17.6% and 27.6%, respectively. By comparison with all other designs, SSCSAs outperform them at every corner.\",\"PeriodicalId\":21585,\"journal\":{\"name\":\"Semiconductor Science and Technology\",\"volume\":\"726 1\",\"pages\":\"\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-08-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor Science and Technology\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6641/ad6e15\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad6e15","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
An efficient single-stage carry select adder using excess-1 FinFET circuit in 22 nm technology
Conventional carry select adders (CCSA) have two stages and are followed by multiplexers. CCSAs use ripple carry adders at two stages, which will introduce much delay due to carry propagation. To choose the option between an excess-1 result and a normal result, the CCSA employs a multiplexer. The proposed single-stage carry select adder (SSCSA) has a single stage and uses a new block to generate a normal and excess-1 result based on the readily available inputs (A and B). A novel architecture is developed and specifically designed to improve power dissipation and latency. It relies on a single circuit that produces normal/excess-1 results dependent on input carry. Heterogeneous logic combining CMOS, Dual Value Logic, and Transmission Gate Logic with 22 nm Fin-FETs powers the 1-bit SSCSA circuit. Better circuit regularity is displayed by the 4-bit SSCSA, as it only uses one type of 1-bit SSCSA. With the use of Cadence Virtuoso, ADEL, and ADEXL at 22 nm FinFET technology, all adders, including 4- and 8-bit adders, are designed, simulated, and examined. According to the resulting study, the 4-bit SSCSA outperforms the best adder among existing adders in terms of speed performance and power dissipation by 17.6% and 27.6%, respectively. By comparison with all other designs, SSCSAs outperform them at every corner.
期刊介绍:
Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic.
The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including:
fundamental properties
materials and nanostructures
devices and applications
fabrication and processing
new analytical techniques
simulation
emerging fields:
materials and devices for quantum technologies
hybrid structures and devices
2D and topological materials
metamaterials
semiconductors for energy
flexible electronics.