Zhaohui Qin, Lan Chen, Renjie Lu, Yali Wang, Xiaoran Hao, Rong Chen, Yan Sun, Qin Du
{"title":"非矩形 14 纳米块状 FinFET* 中自热效应的调节因素和机理研究","authors":"Zhaohui Qin, Lan Chen, Renjie Lu, Yali Wang, Xiaoran Hao, Rong Chen, Yan Sun, Qin Du","doi":"10.1088/1361-6641/ad689f","DOIUrl":null,"url":null,"abstract":"This work investigates the innovative design of a 14 nm bulk 3D non-rectangular structure fin field-effect transistor (FinFET). By incorporating a cylindrical trapezoidal structure into the upper portion of the FinFET, it transcend the limitations posed by the self-heating (SH) effect observed in traditional rectangular fins.Through the density gradient model and thermal conduction model, the changes in the electron carrier temperature and lattice temperature of the channel are studied, and the relationship between electrical properties and thermal resistance was further analyzed, revealing the effect of SH on the threshold voltage and switching speed of the device. In addition, the SH effect of the doping of source and drain extension regions was also explored, and the effects of electron mobility changes at different ambient temperatures were also studied to clarify their impact on the electrical properties. Ultimately, this work offers novel insights into the design, optimization, and reliability studies of device structures affected by SH effects.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"130 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study on the regulation factors and mechanism of self-heating effects in non-rectangular 14 nm bulk FinFET*\",\"authors\":\"Zhaohui Qin, Lan Chen, Renjie Lu, Yali Wang, Xiaoran Hao, Rong Chen, Yan Sun, Qin Du\",\"doi\":\"10.1088/1361-6641/ad689f\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work investigates the innovative design of a 14 nm bulk 3D non-rectangular structure fin field-effect transistor (FinFET). By incorporating a cylindrical trapezoidal structure into the upper portion of the FinFET, it transcend the limitations posed by the self-heating (SH) effect observed in traditional rectangular fins.Through the density gradient model and thermal conduction model, the changes in the electron carrier temperature and lattice temperature of the channel are studied, and the relationship between electrical properties and thermal resistance was further analyzed, revealing the effect of SH on the threshold voltage and switching speed of the device. In addition, the SH effect of the doping of source and drain extension regions was also explored, and the effects of electron mobility changes at different ambient temperatures were also studied to clarify their impact on the electrical properties. Ultimately, this work offers novel insights into the design, optimization, and reliability studies of device structures affected by SH effects.\",\"PeriodicalId\":21585,\"journal\":{\"name\":\"Semiconductor Science and Technology\",\"volume\":\"130 1\",\"pages\":\"\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-08-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor Science and Technology\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6641/ad689f\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad689f","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
这项研究探讨了 14 纳米大块三维非矩形结构鳍式场效应晶体管(FinFET)的创新设计。通过密度梯度模型和热传导模型,研究了电子载流子温度和沟道晶格温度的变化,并进一步分析了电性能和热阻之间的关系,揭示了 SH 对器件阈值电压和开关速度的影响。此外,还探讨了源极和漏极扩展区掺杂的 SH 效应,并研究了不同环境温度下电子迁移率变化的影响,以明确其对电学特性的影响。最终,这项工作为受 SH 效应影响的器件结构的设计、优化和可靠性研究提供了新的见解。
Study on the regulation factors and mechanism of self-heating effects in non-rectangular 14 nm bulk FinFET*
This work investigates the innovative design of a 14 nm bulk 3D non-rectangular structure fin field-effect transistor (FinFET). By incorporating a cylindrical trapezoidal structure into the upper portion of the FinFET, it transcend the limitations posed by the self-heating (SH) effect observed in traditional rectangular fins.Through the density gradient model and thermal conduction model, the changes in the electron carrier temperature and lattice temperature of the channel are studied, and the relationship between electrical properties and thermal resistance was further analyzed, revealing the effect of SH on the threshold voltage and switching speed of the device. In addition, the SH effect of the doping of source and drain extension regions was also explored, and the effects of electron mobility changes at different ambient temperatures were also studied to clarify their impact on the electrical properties. Ultimately, this work offers novel insights into the design, optimization, and reliability studies of device structures affected by SH effects.
期刊介绍:
Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic.
The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including:
fundamental properties
materials and nanostructures
devices and applications
fabrication and processing
new analytical techniques
simulation
emerging fields:
materials and devices for quantum technologies
hybrid structures and devices
2D and topological materials
metamaterials
semiconductors for energy
flexible electronics.