{"title":"基于掺杂 AgNPs 缓冲层的 PFO 和 BUBD-1 混合薄膜的优化双波段放大自发辐射特性","authors":"","doi":"10.1016/j.optlastec.2024.111776","DOIUrl":null,"url":null,"abstract":"<div><p>Dual-band amplified spontaneous emission (ASE) can be used as a spectral analysis technique to detect specific chemical or biological molecules. In this paper, the dual-band ASE properties of blend films containing a small organic molecule N,N’-(4,4′-(1E,1′E)-2, 2′-(1,4-phenylene) bis(ethene-2,1-diyl)) −bis(4,1-phenylene))-bis(2-ethyl-6-methyl-phenylaniline) (BUBD-1) and a conductive polymer Poly(9,9-dioctylfluorenyl-2,7-diyl) (PFO) were investigated and optimized. As the doping concentration of BUBD-1 in the PFO was increased from PFO: 1 wt% BUBD-1 to PFO: 5 wt% BUBD-1, the ASE emission wavelength shifted from single- to dual-band and then back. The dual-band ASE performance of the blend film was also improved by introducing a Poly(methyl methacrylate) (PMMA) buffer layer containing silver nanoparticles (AgNPs), which resulted in a significant decrease in the excitation energy threshold of both ASE peaks and a significant increase in the net gain. Due to the LSPR effect of AgNPs, the ASE thresholds for peaks at 460 nm (PFO) and 490 nm (BUBD-1) in the blend film decreased from 12.24 ± 0.49 μJ/pulse to 6.99 ± 0.28 μJ/pulse and from 12.75 ± 0.51 μJ/pulse to 7.03 ± 0.28 μJ/pulse, respectively. The experimental and theoretical simulation demonstrated that the incomplete energy transfer between PFO and BUBD-1 led to a dual-band ASE effect. In addition, the enhanced light absorption, emission, and scattering caused by LSPR in the AgNPs improved the threshold and gain for dual-band ASE. This provides a possibility of realizing dual-band organic semiconductor lasers.</p></div>","PeriodicalId":19511,"journal":{"name":"Optics and Laser Technology","volume":null,"pages":null},"PeriodicalIF":4.6000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimized dual-band amplified spontaneous emission properties of PFO and BUBD-1 blend films based on AgNPs doped buffer layers\",\"authors\":\"\",\"doi\":\"10.1016/j.optlastec.2024.111776\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Dual-band amplified spontaneous emission (ASE) can be used as a spectral analysis technique to detect specific chemical or biological molecules. In this paper, the dual-band ASE properties of blend films containing a small organic molecule N,N’-(4,4′-(1E,1′E)-2, 2′-(1,4-phenylene) bis(ethene-2,1-diyl)) −bis(4,1-phenylene))-bis(2-ethyl-6-methyl-phenylaniline) (BUBD-1) and a conductive polymer Poly(9,9-dioctylfluorenyl-2,7-diyl) (PFO) were investigated and optimized. As the doping concentration of BUBD-1 in the PFO was increased from PFO: 1 wt% BUBD-1 to PFO: 5 wt% BUBD-1, the ASE emission wavelength shifted from single- to dual-band and then back. The dual-band ASE performance of the blend film was also improved by introducing a Poly(methyl methacrylate) (PMMA) buffer layer containing silver nanoparticles (AgNPs), which resulted in a significant decrease in the excitation energy threshold of both ASE peaks and a significant increase in the net gain. Due to the LSPR effect of AgNPs, the ASE thresholds for peaks at 460 nm (PFO) and 490 nm (BUBD-1) in the blend film decreased from 12.24 ± 0.49 μJ/pulse to 6.99 ± 0.28 μJ/pulse and from 12.75 ± 0.51 μJ/pulse to 7.03 ± 0.28 μJ/pulse, respectively. The experimental and theoretical simulation demonstrated that the incomplete energy transfer between PFO and BUBD-1 led to a dual-band ASE effect. In addition, the enhanced light absorption, emission, and scattering caused by LSPR in the AgNPs improved the threshold and gain for dual-band ASE. This provides a possibility of realizing dual-band organic semiconductor lasers.</p></div>\",\"PeriodicalId\":19511,\"journal\":{\"name\":\"Optics and Laser Technology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2024-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optics and Laser Technology\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0030399224012349\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optics and Laser Technology","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0030399224012349","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
Optimized dual-band amplified spontaneous emission properties of PFO and BUBD-1 blend films based on AgNPs doped buffer layers
Dual-band amplified spontaneous emission (ASE) can be used as a spectral analysis technique to detect specific chemical or biological molecules. In this paper, the dual-band ASE properties of blend films containing a small organic molecule N,N’-(4,4′-(1E,1′E)-2, 2′-(1,4-phenylene) bis(ethene-2,1-diyl)) −bis(4,1-phenylene))-bis(2-ethyl-6-methyl-phenylaniline) (BUBD-1) and a conductive polymer Poly(9,9-dioctylfluorenyl-2,7-diyl) (PFO) were investigated and optimized. As the doping concentration of BUBD-1 in the PFO was increased from PFO: 1 wt% BUBD-1 to PFO: 5 wt% BUBD-1, the ASE emission wavelength shifted from single- to dual-band and then back. The dual-band ASE performance of the blend film was also improved by introducing a Poly(methyl methacrylate) (PMMA) buffer layer containing silver nanoparticles (AgNPs), which resulted in a significant decrease in the excitation energy threshold of both ASE peaks and a significant increase in the net gain. Due to the LSPR effect of AgNPs, the ASE thresholds for peaks at 460 nm (PFO) and 490 nm (BUBD-1) in the blend film decreased from 12.24 ± 0.49 μJ/pulse to 6.99 ± 0.28 μJ/pulse and from 12.75 ± 0.51 μJ/pulse to 7.03 ± 0.28 μJ/pulse, respectively. The experimental and theoretical simulation demonstrated that the incomplete energy transfer between PFO and BUBD-1 led to a dual-band ASE effect. In addition, the enhanced light absorption, emission, and scattering caused by LSPR in the AgNPs improved the threshold and gain for dual-band ASE. This provides a possibility of realizing dual-band organic semiconductor lasers.
期刊介绍:
Optics & Laser Technology aims to provide a vehicle for the publication of a broad range of high quality research and review papers in those fields of scientific and engineering research appertaining to the development and application of the technology of optics and lasers. Papers describing original work in these areas are submitted to rigorous refereeing prior to acceptance for publication.
The scope of Optics & Laser Technology encompasses, but is not restricted to, the following areas:
•development in all types of lasers
•developments in optoelectronic devices and photonics
•developments in new photonics and optical concepts
•developments in conventional optics, optical instruments and components
•techniques of optical metrology, including interferometry and optical fibre sensors
•LIDAR and other non-contact optical measurement techniques, including optical methods in heat and fluid flow
•applications of lasers to materials processing, optical NDT display (including holography) and optical communication
•research and development in the field of laser safety including studies of hazards resulting from the applications of lasers (laser safety, hazards of laser fume)
•developments in optical computing and optical information processing
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