从射频噪声系数测量中确定亚微米 MOSFET 噪声模型参数的方法

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-09-02 DOI:10.1109/JEDS.2024.3453408

Hanqi Gao;Jing Jin;Jianjun Zhou

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引用次数: 0

摘要

本文介绍了一种直接从射频（RF）散射参数和噪声系数测量值获得深亚微米 MOSFET 中噪声模型参数 $T_{mathrm { d}}$ 的提取方法。研究还开发了一种简化的噪声等效电路，以及计算 MOSFET 射频噪声系数的闭式解。介绍了晶圆上的实验验证，并与基于调谐器的方法进行了比较。对于 $16\times 1\times 2{\mu }\rm m}$（栅极手指数 $\times $ 单位栅极宽度 $\times $ 单元）栅极长度的 MOSFET，模拟和测量结果之间存在良好的一致性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement

An extraction method to obtain the noise model parameter

$T_{\mathrm { d}}$

in deep submicron MOSFETs directly from radio frequency (RF) scattering parameters and noise figure measurements is presented. A simplified noise equivalent circuit, along with closed-form solutions to calculate the RF noise figure of MOSFET is developed. On-wafer experimental verification is presented and a comparison with tuner based method is given. Good agreement is obtained between simulated and measured results for

$16\times 1\times 2{{\mu }\rm m}$

(number of gate fingers

$\times $

unit gatewidth

$\times $

cells) gatelength MOSFETs.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.