从射频噪声系数测量中确定亚微米 MOSFET 噪声模型参数的方法

IF 4.6 Q2 MATERIALS SCIENCE, BIOMATERIALS

ACS Applied Bio Materials Pub Date : 2024-09-02 DOI:10.1109/JEDS.2024.3453408

Hanqi Gao;Jing Jin;Jianjun Zhou

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引用次数: 0

摘要

本文介绍了一种直接从射频（RF）散射参数和噪声系数测量值获得深亚微米 MOSFET 中噪声模型参数 $T_{mathrm { d}}$ 的提取方法。研究还开发了一种简化的噪声等效电路，以及计算 MOSFET 射频噪声系数的闭式解。介绍了晶圆上的实验验证，并与基于调谐器的方法进行了比较。对于 $16\times 1\times 2{\mu }\rm m}$（栅极手指数 $\times $ 单位栅极宽度 $\times $ 单元）栅极长度的 MOSFET，模拟和测量结果之间存在良好的一致性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement

An extraction method to obtain the noise model parameter

$T_{\mathrm { d}}$

in deep submicron MOSFETs directly from radio frequency (RF) scattering parameters and noise figure measurements is presented. A simplified noise equivalent circuit, along with closed-form solutions to calculate the RF noise figure of MOSFET is developed. On-wafer experimental verification is presented and a comparison with tuner based method is given. Good agreement is obtained between simulated and measured results for

$16\times 1\times 2{{\mu }\rm m}$

(number of gate fingers

$\times $

unit gatewidth

$\times $

cells) gatelength MOSFETs.

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