离散陷阱对 3-D NAND 变异性的影响 - 第二部分：随机电报噪声

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-08-21 DOI:10.1109/JEDS.2024.3447150

Gerardo Malavena;Salvatore M. Amoroso;Andrew R. Brown;Plamen Asenov;Xi-Wei Lin;Victor Moroz;Mattia Giulianini;David Refaldi;Christian Monzio Compagnoni;Alessandro S. Spinelli

{"title":"离散陷阱对 3-D NAND 变异性的影响 - 第二部分：随机电报噪声","authors":"Gerardo Malavena;Salvatore M. Amoroso;Andrew R. Brown;Plamen Asenov;Xi-Wei Lin;Victor Moroz;Mattia Giulianini;David Refaldi;Christian Monzio Compagnoni;Alessandro S. Spinelli","doi":"10.1109/JEDS.2024.3447150","DOIUrl":null,"url":null,"abstract":"In Part II of this article we discuss the impact of a discrete treatment of traps on 3-D NAND Flash random telegraph noise (RTN). A higher RTN results when discrete traps are taken into account, that can only be explained by a stronger influence of the discrete charged traps on the current conduction, leading to more percolation. The effects are then investigated as a function of the cell parameters, showing that a continuous model for traps cannot reproduce the correct dependence.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"658-661"},"PeriodicalIF":2.0000,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10643403","citationCount":"0","resultStr":"{\"title\":\"Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise\",\"authors\":\"Gerardo Malavena;Salvatore M. Amoroso;Andrew R. Brown;Plamen Asenov;Xi-Wei Lin;Victor Moroz;Mattia Giulianini;David Refaldi;Christian Monzio Compagnoni;Alessandro S. Spinelli\",\"doi\":\"10.1109/JEDS.2024.3447150\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In Part II of this article we discuss the impact of a discrete treatment of traps on 3-D NAND Flash random telegraph noise (RTN). A higher RTN results when discrete traps are taken into account, that can only be explained by a stronger influence of the discrete charged traps on the current conduction, leading to more percolation. The effects are then investigated as a function of the cell parameters, showing that a continuous model for traps cannot reproduce the correct dependence.\",\"PeriodicalId\":13210,\"journal\":{\"name\":\"IEEE Journal of the Electron Devices Society\",\"volume\":\"12 \",\"pages\":\"658-661\"},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2024-08-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10643403\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of the Electron Devices Society\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10643403/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10643403/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

在本文的第二部分，我们将讨论离散陷阱处理对 3-D NAND 闪存随机电报噪声（RTN）的影响。当考虑到离散陷阱时，RTN 会更高，这只能解释为离散带电陷阱对电流传导的影响更大，导致更多的渗滤。然后研究了作为电池参数函数的影响，结果表明陷阱的连续模型无法再现正确的依赖关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise

In Part II of this article we discuss the impact of a discrete treatment of traps on 3-D NAND Flash random telegraph noise (RTN). A higher RTN results when discrete traps are taken into account, that can only be explained by a stronger influence of the discrete charged traps on the current conduction, leading to more percolation. The effects are then investigated as a function of the cell parameters, showing that a continuous model for traps cannot reproduce the correct dependence.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.