Gerardo Malavena;Salvatore M. Amoroso;Andrew R. Brown;Plamen Asenov;Xi-Wei Lin;Victor Moroz;Mattia Giulianini;David Refaldi;Christian Monzio Compagnoni;Alessandro S. Spinelli
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Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise
In Part II of this article we discuss the impact of a discrete treatment of traps on 3-D NAND Flash random telegraph noise (RTN). A higher RTN results when discrete traps are taken into account, that can only be explained by a stronger influence of the discrete charged traps on the current conduction, leading to more percolation. The effects are then investigated as a function of the cell parameters, showing that a continuous model for traps cannot reproduce the correct dependence.
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