用于高速硬 X 射线成像的高性能锗 P-I-N 光电二极管

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-08-08 DOI:10.1109/JEDS.2024.3441389

Ziang Guo;Sergei Mistyuk;Arthur Carpenter;Charles E. Hunt

{"title":"用于高速硬 X 射线成像的高性能锗 P-I-N 光电二极管","authors":"Ziang Guo;Sergei Mistyuk;Arthur Carpenter;Charles E. Hunt","doi":"10.1109/JEDS.2024.3441389","DOIUrl":null,"url":null,"abstract":"Design, fabrication, and measurement of vertical Germanium (Ge) Photodiodes for highspeed, hard X-Ray imaging is presented. The devices used atmospheric-pressure epitaxial absorption layers, varying absorption layer thicknesses (10 – 245 \n<inline-formula> <tex-math>$\\mu$ </tex-math></inline-formula>\nm) over bulk-Ge substrates, fabricated in various sizes. Measurements include large-signal and transient-response from X-ray source between 6 keV and 28 keV. The results approach a 100% external quantum efficiency with 245 \n<inline-formula> <tex-math>$\\mu$ </tex-math></inline-formula>\nm absorption regions and a 22% improvement in temporal response with 10 \n<inline-formula> <tex-math>$\\mu$ </tex-math></inline-formula>\nm absorption region compared to an Si reference device of the same active area.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"1051-1056"},"PeriodicalIF":2.0000,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10632103","citationCount":"0","resultStr":"{\"title\":\"High-Performance Germanium P-I-N Photodiodes for High-Speed, Hard X-Ray Imaging\",\"authors\":\"Ziang Guo;Sergei Mistyuk;Arthur Carpenter;Charles E. Hunt\",\"doi\":\"10.1109/JEDS.2024.3441389\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Design, fabrication, and measurement of vertical Germanium (Ge) Photodiodes for highspeed, hard X-Ray imaging is presented. The devices used atmospheric-pressure epitaxial absorption layers, varying absorption layer thicknesses (10 – 245 \\n<inline-formula> <tex-math>$\\\\mu$ </tex-math></inline-formula>\\nm) over bulk-Ge substrates, fabricated in various sizes. Measurements include large-signal and transient-response from X-ray source between 6 keV and 28 keV. The results approach a 100% external quantum efficiency with 245 \\n<inline-formula> <tex-math>$\\\\mu$ </tex-math></inline-formula>\\nm absorption regions and a 22% improvement in temporal response with 10 \\n<inline-formula> <tex-math>$\\\\mu$ </tex-math></inline-formula>\\nm absorption region compared to an Si reference device of the same active area.\",\"PeriodicalId\":13210,\"journal\":{\"name\":\"IEEE Journal of the Electron Devices Society\",\"volume\":\"12 \",\"pages\":\"1051-1056\"},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2024-08-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10632103\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of the Electron Devices Society\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10632103/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10632103/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

介绍了用于高速硬x射线成像的垂直锗光电二极管的设计、制造和测量。该器件采用常压外延吸收层，不同的吸收层厚度（10 - 245 $\mu$ m）覆盖在体积锗衬底上，制作成不同的尺寸。测量包括6 keV和28 keV之间的x射线源的大信号和瞬态响应。结果表明，与具有相同活性区域的Si参考器件相比，245 $\mu$ m吸收区域的外量子效率接近100%，10 $\mu$ m吸收区域的时间响应提高了22%。

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High-Performance Germanium P-I-N Photodiodes for High-Speed, Hard X-Ray Imaging

Design, fabrication, and measurement of vertical Germanium (Ge) Photodiodes for highspeed, hard X-Ray imaging is presented. The devices used atmospheric-pressure epitaxial absorption layers, varying absorption layer thicknesses (10 – 245

$\mu$

m) over bulk-Ge substrates, fabricated in various sizes. Measurements include large-signal and transient-response from X-ray source between 6 keV and 28 keV. The results approach a 100% external quantum efficiency with 245

$\mu$

m absorption regions and a 22% improvement in temporal response with 10

$\mu$

m absorption region compared to an Si reference device of the same active area.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.