反应离子蚀刻在微电子领域的 50 年发展历程

Sergey Voronin;Christophe Vallée
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引用次数: 0

摘要

在这篇简短的综述中,我们探讨了自 50 年前发现反应离子蚀刻工艺以来,微电子制造中使用的等离子蚀刻技术的演变。首先从工艺工程的角度讨论了这些演变。在举例说明当前和未来面临的挑战后,介绍了如何通过使用脉冲等离子体和循环工艺等创新解决方案来提高蚀刻精度。第二部分从工业设备和部件的设计角度讨论了这些变化。特别是,通过讨论通用硬件组件、最常见的等离子源、功率耦合效率和匹配网络,讨论了工具设计的演变。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
50 Years of Reactive Ion Etching in Microelectronics
In this short review, the evolution of plasma etching technologies used in microelectronics fabrication since the discovery of the reactive ion etching process 50 years ago is explored. These evolutions are first discussed from a process engineering point of view. After giving some examples of present and future challenges, it is described how the precision of the etching can be improved by using innovative solutions such as pulsing plasmas and cyclic processes. These changes are then discussed in a second section from a design point of view for industrial equipment and components. In particular, the tool design evolution is discussed by addressing its generic hardware components, most common plasma sources, power coupling efficiency and matching networks.
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