用于离线电源的 500V、6.25MHz GaN-IC，带栅极驱动器和电平转换器

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE

IEEE Solid-State Circuits Letters Pub Date : 2024-06-07 DOI:10.1109/LSSC.2024.3411390

Niklas Deneke;Bernhard Wicht

{"title":"用于离线电源的 500V、6.25MHz GaN-IC，带栅极驱动器和电平转换器","authors":"Niklas Deneke;Bernhard Wicht","doi":"10.1109/LSSC.2024.3411390","DOIUrl":null,"url":null,"abstract":"Gallium Nitride (GaN) technology enables essential progress in energy efficiency and density, especially in off-line power supplies. This letter presents a monolithic GaN-IC, including a half-bridge, formed by two high-voltage power FETs with respective gate drivers and a high-voltage level shifter, forming a signal interface between high-side and low-side domain, making use of a GaN-on-SOI technology. Verified by experimental results, it achieves 500-V switching at 6.25 MHz and is thus well suited for off-line power supplies.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 500-V, 6.25-MHz GaN-IC With Gate Driver and Level Shifter for Off-Line Power Supplies\",\"authors\":\"Niklas Deneke;Bernhard Wicht\",\"doi\":\"10.1109/LSSC.2024.3411390\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gallium Nitride (GaN) technology enables essential progress in energy efficiency and density, especially in off-line power supplies. This letter presents a monolithic GaN-IC, including a half-bridge, formed by two high-voltage power FETs with respective gate drivers and a high-voltage level shifter, forming a signal interface between high-side and low-side domain, making use of a GaN-on-SOI technology. Verified by experimental results, it achieves 500-V switching at 6.25 MHz and is thus well suited for off-line power supplies.\",\"PeriodicalId\":13032,\"journal\":{\"name\":\"IEEE Solid-State Circuits Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Solid-State Circuits Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10552152/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10552152/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}

引用次数: 0

摘要

氮化镓（GaN）技术在能源效率和密度方面取得了重大进展，尤其是在离线电源方面。本文介绍了一种单片式氮化镓集成电路（GaN-IC），包括一个半桥，由两个高压功率场效应晶体管与各自的栅极驱动器和一个高压电平转换器组成，形成了高压侧和低压侧域之间的信号接口，并采用了氮化镓硅 (GaN-on-SOI) 技术。实验结果证明，它能在 6.25 MHz 频率下实现 500 V 开关，因此非常适合离线电源。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 500-V, 6.25-MHz GaN-IC With Gate Driver and Level Shifter for Off-Line Power Supplies

Gallium Nitride (GaN) technology enables essential progress in energy efficiency and density, especially in off-line power supplies. This letter presents a monolithic GaN-IC, including a half-bridge, formed by two high-voltage power FETs with respective gate drivers and a high-voltage level shifter, forming a signal interface between high-side and low-side domain, making use of a GaN-on-SOI technology. Verified by experimental results, it achieves 500-V switching at 6.25 MHz and is thus well suited for off-line power supplies.

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来源期刊

IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering

CiteScore

4.30

自引率

3.70%

发文量