基于 HfO$_{\text{2}}$ 的 Memristors 中的随机共振：外部噪声对二进制 STDP 协议的影响

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-08-09 DOI:10.1109/TED.2024.3435173

E. Salvador;R. Rodriguez;E. Miranda;J. Martin-Martinez;A. Rubio;V. Ntinas;G. Ch. Sirakoulis;A. Crespo-Yepes;M. Nafria

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引用次数: 0

摘要

本文论述了在基于二氧化铪的忆阻器中实验观察到的随机共振（SR）现象。我们研究了随机共振在器件层面对二进制尖峰时间可塑性（STDP）协议的影响。我们证明，通过在偏置信号中加入高斯噪声，可以更好地区分代表神经形态系统中突触权重的器件的两种极端电导状态。这种技术可以设置忆阻器电导，而忆阻器电导与突触前脉冲和突触后脉冲之间的重叠直接相关。这项研究在 LTSPICE 模拟器中使用动态忆阻器模型（DMM）重现。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Stochastic Resonance in HfO₂-Based Memristors: Impact of External Noise on the Binary STDP Protocol

This article deals with the stochastic resonance (SR) phenomenon experimentally observed in HfO2-based memristors. The SR impact on the binary spike time-dependent plasticity (STDP) protocol at the device level was investigated. We demonstrate that the two extreme conductance states of the device that represent the synaptic weights in neuromorphic systems can be better distinguished with the incorporation of Gaussian noise into the bias signal. This technique allows setting the memristor conductance which is directly related to the overlap between the pre- and postsynaptic pulses. The study is reproduced in the LTSPICE simulator using the dynamic memdiode model (DMM) for memristors.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.