用于了解铁电电容器边界陷阱的阶跃恢复多脉冲测试 (SRMPT) 表征技术

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yishan Wu;Zhiwei Liu;Maokun Wu;Puyang Cai;Xuepei Wang;Jinhao Liu;Boyao Cui;Junjie Wu;Yichen Wen;Runsheng Wang;Sheng Ye;Pengpeng Ren;Zhigang Ji;Ru Huang
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引用次数: 0

摘要

我们提出了一种简单的技术--多脉冲阶跃恢复测试 (SRMPT),用于获取铁电器件中铁电/电极界面附近边界陷阱密度和能量分布的广泛信息。为了演示,我们采用这种方法来探索电极材料对铁电电容器(FeCAP)的影响。我们的研究结果表明,与 W 电极相比,TiN 电极诱导的边界陷阱能级分布更广,陷阱密度也明显更高。与非原位理论计算的比较分析表明,这些边界陷阱源于氧空位。这种简单的方法不仅提供了边界陷阱的定量信息,还可作为材料选择和器件优化的有效工具。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Step-Recovery With Multi-Pulse Test (SRMPT) Characterization Technique for the Understanding of Border Traps in Ferroelectric Capacitors
A simple technique, the Step-recovery with Multi-pulse Test (SRMPT), is proposed to obtain extensive information on the density and energy distribution of the border traps near the ferroelectric/electrode interface in ferroelectric devices. For demonstration purpose, the approach is adopted to explore the impact of electrode materials on ferroelectric capacitors (FeCAPs). Our results indicate that TiN electrodes induce a broader distribution of border traps in energy level as well as a significantly higher trap density, compared with W electrodes. A comparative analysis with ab-initio theoretical calculation suggests that these border traps originate from the oxygen vacancies. The simple approach not only provides quantitative information on the border trap but also serves as a potent tool for material selection and device optimization.
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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