{"title":"使用各种前驱体对氮基等离子体钝化 GaN 射频 HEMT 的研究","authors":"Qiaoyu Hu;Wei-Chih Cheng;Xiguang Chen;Chenkai Deng;Lina Liao;Wenmao Li;Yang Jiang;Jiaqi He;Yi Zhang;Chuying Tang;Peiran Wang;Kangyao Wen;Fangzhou Du;Yifan Cui;Mujun Li;Wenyue Yu;Robert Sokolovskij;Nick Tao;Qing Wang;Hongyu Yu","doi":"10.1109/JEDS.2024.3412186","DOIUrl":null,"url":null,"abstract":"This study investigates the DC and RF performance of RF GaN High Electron Mobility Transistors (HEMTs) subjected to surface pretreatments by N\n<sub>2</sub>\n and N\n<sub>2</sub>\nO plasma. The filling of nitrogen vacancies or the passivation effect introduced by the thin GaON layer result in enhanced DC characteristics and RF performance for devices treated with nitrogen-based plasma. Compared to the untreated device, the device treated with N\n<sub>2</sub>\n plasma exhibited a significant improvement in performance, i.e., the saturated current increased by approximately 16%, the characteristic frequency (f\n<sub>T</sub>\n) had an increase of 27.6 GHz, the maximum oscillating frequency (f\n<sub>max</sub>\n) increased by 60.4 GHz. Furthermore, the breakdown voltage had a 10.7% increase, and the dynamic/static on-resistance ratio decreased from 1.34 to 1.18. These results highlight the potential of nitrogen-based plasma treatments in improving the performance of RF GaN HEMTs.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.0000,"publicationDate":"2024-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10552704","citationCount":"0","resultStr":"{\"title\":\"Investigation of Nitrogen-Based Plasma Passivation on GaN RF HEMTs Using Various Precursors\",\"authors\":\"Qiaoyu Hu;Wei-Chih Cheng;Xiguang Chen;Chenkai Deng;Lina Liao;Wenmao Li;Yang Jiang;Jiaqi He;Yi Zhang;Chuying Tang;Peiran Wang;Kangyao Wen;Fangzhou Du;Yifan Cui;Mujun Li;Wenyue Yu;Robert Sokolovskij;Nick Tao;Qing Wang;Hongyu Yu\",\"doi\":\"10.1109/JEDS.2024.3412186\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study investigates the DC and RF performance of RF GaN High Electron Mobility Transistors (HEMTs) subjected to surface pretreatments by N\\n<sub>2</sub>\\n and N\\n<sub>2</sub>\\nO plasma. The filling of nitrogen vacancies or the passivation effect introduced by the thin GaON layer result in enhanced DC characteristics and RF performance for devices treated with nitrogen-based plasma. Compared to the untreated device, the device treated with N\\n<sub>2</sub>\\n plasma exhibited a significant improvement in performance, i.e., the saturated current increased by approximately 16%, the characteristic frequency (f\\n<sub>T</sub>\\n) had an increase of 27.6 GHz, the maximum oscillating frequency (f\\n<sub>max</sub>\\n) increased by 60.4 GHz. Furthermore, the breakdown voltage had a 10.7% increase, and the dynamic/static on-resistance ratio decreased from 1.34 to 1.18. These results highlight the potential of nitrogen-based plasma treatments in improving the performance of RF GaN HEMTs.\",\"PeriodicalId\":13210,\"journal\":{\"name\":\"IEEE Journal of the Electron Devices Society\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2024-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10552704\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of the Electron Devices Society\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10552704/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10552704/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Investigation of Nitrogen-Based Plasma Passivation on GaN RF HEMTs Using Various Precursors
This study investigates the DC and RF performance of RF GaN High Electron Mobility Transistors (HEMTs) subjected to surface pretreatments by N
2
and N
2
O plasma. The filling of nitrogen vacancies or the passivation effect introduced by the thin GaON layer result in enhanced DC characteristics and RF performance for devices treated with nitrogen-based plasma. Compared to the untreated device, the device treated with N
2
plasma exhibited a significant improvement in performance, i.e., the saturated current increased by approximately 16%, the characteristic frequency (f
T
) had an increase of 27.6 GHz, the maximum oscillating frequency (f
max
) increased by 60.4 GHz. Furthermore, the breakdown voltage had a 10.7% increase, and the dynamic/static on-resistance ratio decreased from 1.34 to 1.18. These results highlight the potential of nitrogen-based plasma treatments in improving the performance of RF GaN HEMTs.
期刊介绍:
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.