全面评估无结和反转模式纳米线 MOSFET 在高温下的性能

IF 2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Rhaycen R. Prates;Sylvain Barraud;Mikael Cassé;Maud Vinet;Olivier Faynot;Marcelo A. Pavanello
{"title":"全面评估无结和反转模式纳米线 MOSFET 在高温下的性能","authors":"Rhaycen R. Prates;Sylvain Barraud;Mikael Cassé;Maud Vinet;Olivier Faynot;Marcelo A. Pavanello","doi":"10.1109/JEDS.2024.3409579","DOIUrl":null,"url":null,"abstract":"This work aims to perform a comprehensive comparison of the electrical properties of junctionless and inversion-mode nanowires MOSFETS, fabricated with similar gate stack and state-of-art process, in the temperature range from 300 K to 580 K. The comparative analysis is performed through the main electrical parameters of the devices, such as the threshold voltage, subthreshold current and slope, DIBL, conduction current, mobility, and maximum transconductance extracted from experimental data. Devices with different fin widths are compared. It is demonstrated that the inversion-mode nanowire transistors present higher performance with three times higher maximum transconductance and conduction current and twice higher low field mobility than the junctionless’ with a fin width of 10 nm at a fixed temperature. On the other hand, the junctionless nanowire transistors presented higher thermal stability of their electrical parameters with a 75% lower variation of maximum transconductance with temperature, 77% lower maximum transconductance variation with temperature, and 22% lower temperature coefficient of mobility.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.0000,"publicationDate":"2024-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10549873","citationCount":"0","resultStr":"{\"title\":\"Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures\",\"authors\":\"Rhaycen R. Prates;Sylvain Barraud;Mikael Cassé;Maud Vinet;Olivier Faynot;Marcelo A. Pavanello\",\"doi\":\"10.1109/JEDS.2024.3409579\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work aims to perform a comprehensive comparison of the electrical properties of junctionless and inversion-mode nanowires MOSFETS, fabricated with similar gate stack and state-of-art process, in the temperature range from 300 K to 580 K. The comparative analysis is performed through the main electrical parameters of the devices, such as the threshold voltage, subthreshold current and slope, DIBL, conduction current, mobility, and maximum transconductance extracted from experimental data. Devices with different fin widths are compared. It is demonstrated that the inversion-mode nanowire transistors present higher performance with three times higher maximum transconductance and conduction current and twice higher low field mobility than the junctionless’ with a fin width of 10 nm at a fixed temperature. On the other hand, the junctionless nanowire transistors presented higher thermal stability of their electrical parameters with a 75% lower variation of maximum transconductance with temperature, 77% lower maximum transconductance variation with temperature, and 22% lower temperature coefficient of mobility.\",\"PeriodicalId\":13210,\"journal\":{\"name\":\"IEEE Journal of the Electron Devices Society\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2024-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10549873\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of the Electron Devices Society\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10549873/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10549873/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

本研究旨在全面比较无结和反转模式纳米线 MOSFETS 在 300 K 至 580 K 温度范围内的电气特性,这两种器件均采用类似的栅极堆栈和最先进的工艺制造而成。对不同鳍片宽度的器件进行了比较。结果表明,在固定温度下,反转模式纳米线晶体管具有更高的性能,其最大跨导和传导电流比翅片宽度为 10 纳米的无结晶体管高出三倍,低场迁移率高出两倍。另一方面,无结纳米线晶体管的电气参数具有更高的热稳定性,最大跨导随温度的变化降低了 75%,最大跨导随温度的变化降低了 77%,迁移率的温度系数降低了 22%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures
This work aims to perform a comprehensive comparison of the electrical properties of junctionless and inversion-mode nanowires MOSFETS, fabricated with similar gate stack and state-of-art process, in the temperature range from 300 K to 580 K. The comparative analysis is performed through the main electrical parameters of the devices, such as the threshold voltage, subthreshold current and slope, DIBL, conduction current, mobility, and maximum transconductance extracted from experimental data. Devices with different fin widths are compared. It is demonstrated that the inversion-mode nanowire transistors present higher performance with three times higher maximum transconductance and conduction current and twice higher low field mobility than the junctionless’ with a fin width of 10 nm at a fixed temperature. On the other hand, the junctionless nanowire transistors presented higher thermal stability of their electrical parameters with a 75% lower variation of maximum transconductance with temperature, 77% lower maximum transconductance variation with temperature, and 22% lower temperature coefficient of mobility.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology
CiteScore
5.20
自引率
4.30%
发文量
124
审稿时长
9 weeks
期刊介绍: The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信