基于铟镓锌氧化物薄膜晶体管的阵列稳健双向栅极驱动器，用于电池内触摸显示器

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-06-17 DOI:10.1109/JEDS.2024.3404595

Liufei Zhou;Fuchao He;Xiaojun Guo;Haihong Wang;Mingxin Wang;Yuning Zhang;Baoping Wang

{"title":"基于铟镓锌氧化物薄膜晶体管的阵列稳健双向栅极驱动器，用于电池内触摸显示器","authors":"Liufei Zhou;Fuchao He;Xiaojun Guo;Haihong Wang;Mingxin Wang;Yuning Zhang;Baoping Wang","doi":"10.1109/JEDS.2024.3404595","DOIUrl":null,"url":null,"abstract":"In this paper, we propose a bidirectional gate driver on array (GOA) circuit design based on indium gallium zinc oxide (IGZO) thin-film transistor (TFT) to support time-division driving method (TDDM) for in-cell touch displays. The proposed circuit allows the touch panel to pause the display for touch sensing operations to achieve a touch reporting rate as twice as the frame rate of a display. A dual low-level maintaining unit design is used to suppress influence of the threshold voltage shift of TFTs through alternately turning on the devices. Owing to recovery of threshold voltage shift under negative bias, this design can maintain stable performance during long time operation. A narrow border 6.5” in-cell LCD panel of 90 Hz display with a 180 Hz touch reporting rate is finally demonstrated.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"662-667"},"PeriodicalIF":2.0000,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10559899","citationCount":"0","resultStr":"{\"title\":\"Robust Bidirectional Gate Driver on Array Based on Indium Gallium Zinc Oxide Thin-Film Transistor for In-Cell Touch Displays\",\"authors\":\"Liufei Zhou;Fuchao He;Xiaojun Guo;Haihong Wang;Mingxin Wang;Yuning Zhang;Baoping Wang\",\"doi\":\"10.1109/JEDS.2024.3404595\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we propose a bidirectional gate driver on array (GOA) circuit design based on indium gallium zinc oxide (IGZO) thin-film transistor (TFT) to support time-division driving method (TDDM) for in-cell touch displays. The proposed circuit allows the touch panel to pause the display for touch sensing operations to achieve a touch reporting rate as twice as the frame rate of a display. A dual low-level maintaining unit design is used to suppress influence of the threshold voltage shift of TFTs through alternately turning on the devices. Owing to recovery of threshold voltage shift under negative bias, this design can maintain stable performance during long time operation. A narrow border 6.5” in-cell LCD panel of 90 Hz display with a 180 Hz touch reporting rate is finally demonstrated.\",\"PeriodicalId\":13210,\"journal\":{\"name\":\"IEEE Journal of the Electron Devices Society\",\"volume\":\"12 \",\"pages\":\"662-667\"},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2024-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10559899\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of the Electron Devices Society\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10559899/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10559899/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本文提出了一种基于铟镓锌氧化物（IGZO）薄膜晶体管（TFT）的双向阵列栅极驱动器（GOA）电路设计，以支持单元内触摸显示器的时分驱动法（TDDM）。所提出的电路允许触摸屏在进行触摸感应操作时暂停显示，从而实现两倍于显示屏帧速率的触摸报告速率。采用双低电平维持单元设计，通过交替开启器件来抑制 TFT 阈值电压偏移的影响。由于阈值电压偏移在负偏压下会恢复，这种设计可以在长时间运行时保持稳定的性能。最后演示了一种窄边框 6.5" 内嵌式液晶面板，其显示频率为 90 Hz，触摸报告率为 180 Hz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Robust Bidirectional Gate Driver on Array Based on Indium Gallium Zinc Oxide Thin-Film Transistor for In-Cell Touch Displays

In this paper, we propose a bidirectional gate driver on array (GOA) circuit design based on indium gallium zinc oxide (IGZO) thin-film transistor (TFT) to support time-division driving method (TDDM) for in-cell touch displays. The proposed circuit allows the touch panel to pause the display for touch sensing operations to achieve a touch reporting rate as twice as the frame rate of a display. A dual low-level maintaining unit design is used to suppress influence of the threshold voltage shift of TFTs through alternately turning on the devices. Owing to recovery of threshold voltage shift under negative bias, this design can maintain stable performance during long time operation. A narrow border 6.5” in-cell LCD panel of 90 Hz display with a 180 Hz touch reporting rate is finally demonstrated.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.