{"title":"源极/漏极电极材料对非晶氧化铟锡锌场效应晶体管电气性能和稳定性的影响","authors":"Seong Ui An;Dae-Hwan Ahn;Gijun Ju;Simin Chen;Yo Seop Ji;Jae-Hoon Han;Jaekyun Kim;Younghyun Kim","doi":"10.1109/TED.2024.3433831","DOIUrl":null,"url":null,"abstract":"The gate-bias stability of amorphous indium-tin-zinc-oxide (a-ITZO) field-effect transistors (FETs) is critical for their display and emerging memory applications. However, a-ITZO FETs suffer from insufficient gate-bias stability induced by oxygen vacancies in the channel layer. To address this issue, we examined the impact of source/drain (S/D) electrode materials (W, Mo, and Ni) on the oxygen vacancy formation and electrical characteristics in the a-ITZO FETs. Through X-ray photoelectron spectroscopy (XPS) analysis, we found that the Ni S/D electrode is effective in forming fewer oxygen vacancies in the a-ITZO channel, whereas W and Mo induce many oxygen vacancies. Our proposed model suggests that the Ni electrode absorbing less oxygen from the a-ITZO films compared to other electrodes leads to fewer oxygen vacancies in the a-ITZO channel. Notably, the a-ITZO FETs incorporating Ni S/D electrodes exhibit not only excellent electrical performance, including a high field-effect mobility of 27.6 cm2/Vs, a steep subthreshold swing (SS) of 71.8 mV/decade, and high on/off ratio of \n<inline-formula> <tex-math>$\\sim 10^{{7}}$ </tex-math></inline-formula>\n, but also an outstanding gate-bias stability (\n<inline-formula> <tex-math>$\\Delta V_{\\text {th}} = -0.04$ </tex-math></inline-formula>\n V) under negative bias stress (NBS) testing. These findings underscore the potential of Ni S/D electrodes in advancing the development of high-performance, stable a-ITZO FETs for the next-generation semiconductor devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs\",\"authors\":\"Seong Ui An;Dae-Hwan Ahn;Gijun Ju;Simin Chen;Yo Seop Ji;Jae-Hoon Han;Jaekyun Kim;Younghyun Kim\",\"doi\":\"10.1109/TED.2024.3433831\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The gate-bias stability of amorphous indium-tin-zinc-oxide (a-ITZO) field-effect transistors (FETs) is critical for their display and emerging memory applications. However, a-ITZO FETs suffer from insufficient gate-bias stability induced by oxygen vacancies in the channel layer. To address this issue, we examined the impact of source/drain (S/D) electrode materials (W, Mo, and Ni) on the oxygen vacancy formation and electrical characteristics in the a-ITZO FETs. Through X-ray photoelectron spectroscopy (XPS) analysis, we found that the Ni S/D electrode is effective in forming fewer oxygen vacancies in the a-ITZO channel, whereas W and Mo induce many oxygen vacancies. Our proposed model suggests that the Ni electrode absorbing less oxygen from the a-ITZO films compared to other electrodes leads to fewer oxygen vacancies in the a-ITZO channel. Notably, the a-ITZO FETs incorporating Ni S/D electrodes exhibit not only excellent electrical performance, including a high field-effect mobility of 27.6 cm2/Vs, a steep subthreshold swing (SS) of 71.8 mV/decade, and high on/off ratio of \\n<inline-formula> <tex-math>$\\\\sim 10^{{7}}$ </tex-math></inline-formula>\\n, but also an outstanding gate-bias stability (\\n<inline-formula> <tex-math>$\\\\Delta V_{\\\\text {th}} = -0.04$ </tex-math></inline-formula>\\n V) under negative bias stress (NBS) testing. These findings underscore the potential of Ni S/D electrodes in advancing the development of high-performance, stable a-ITZO FETs for the next-generation semiconductor devices.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10620402/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10620402/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
非晶铟锡锌氧化物(a-ITZO)场效应晶体管(FET)的栅极偏压稳定性对其显示和新兴存储器应用至关重要。然而,a-ITZO 场效应晶体管因沟道层中的氧空位而导致栅极偏压稳定性不足。为了解决这个问题,我们研究了源电极/漏极(S/D)材料(W、Mo 和 Ni)对 a-ITZO FET 中氧空位形成和电气特性的影响。通过 X 射线光电子能谱 (XPS) 分析,我们发现镍 S/D 电极能有效地在 a-ITZO 沟道中形成较少的氧空位,而 W 和 Mo 则会诱发许多氧空位。我们提出的模型表明,与其他电极相比,镍电极从 a-ITZO 薄膜中吸收的氧气更少,从而导致 a-ITZO 沟道中的氧空位更少。值得注意的是,采用镍 S/D 电极的 a-ITZO FET 不仅具有出色的电气性能,包括 27.6 cm2/Vs 的高场效应迁移率、71.8 mV/decade 的陡峭阈下摆动 (SS) 和 $\sim 10^{7}}$ 的高导通/关断比,而且在负偏压测试下具有出色的栅偏稳定性($\Delta V_{text {th}} = -0.04$ V)。这些发现凸显了镍 S/D 电极在推动高性能、稳定的 a-ITZO FET 开发方面的潜力,可用于下一代半导体器件。
Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs
The gate-bias stability of amorphous indium-tin-zinc-oxide (a-ITZO) field-effect transistors (FETs) is critical for their display and emerging memory applications. However, a-ITZO FETs suffer from insufficient gate-bias stability induced by oxygen vacancies in the channel layer. To address this issue, we examined the impact of source/drain (S/D) electrode materials (W, Mo, and Ni) on the oxygen vacancy formation and electrical characteristics in the a-ITZO FETs. Through X-ray photoelectron spectroscopy (XPS) analysis, we found that the Ni S/D electrode is effective in forming fewer oxygen vacancies in the a-ITZO channel, whereas W and Mo induce many oxygen vacancies. Our proposed model suggests that the Ni electrode absorbing less oxygen from the a-ITZO films compared to other electrodes leads to fewer oxygen vacancies in the a-ITZO channel. Notably, the a-ITZO FETs incorporating Ni S/D electrodes exhibit not only excellent electrical performance, including a high field-effect mobility of 27.6 cm2/Vs, a steep subthreshold swing (SS) of 71.8 mV/decade, and high on/off ratio of
$\sim 10^{{7}}$
, but also an outstanding gate-bias stability (
$\Delta V_{\text {th}} = -0.04$
V) under negative bias stress (NBS) testing. These findings underscore the potential of Ni S/D electrodes in advancing the development of high-performance, stable a-ITZO FETs for the next-generation semiconductor devices.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.