用于彩色感光器的光控阈值开关记忆神经元器件

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-07-29 DOI:10.1109/LED.2024.3435437

Xuanyu Shan;Zhiyong Liu;Ye Tao;Yongjun Dong;Zhongqiang Wang;Jingyao Bian;Xiaoning Zhao;Ya Lin;Haiyang Xu;Yichun Liu

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引用次数: 0

摘要

神经形态光感受器对开发高能效智能系统极为有益。目前亟需能够识别色彩信息的模拟光感受器的电子器件。在此，我们提出了一种基于 Ta2O5:Ag 纳米复合材料的波长依赖性光可调阈值开关记忆神经元器件。该器件的阈值电压可通过不同波长的光刺激进行精确控制。其物理机制可归因于局部表面等离子体共振（LSPR）效应。此外，基于忆阻式器件的人工漏整合发射（LIF）神经元可根据光波长直接将光信号转换为尖峰序列。然后，根据神经元尖峰率的波长依赖性，最终实现彩色光感受器。

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Light-Controlled Threshold Switching Memristive Neuron Devices for Color Photoreceptor

Neuromorphic photoreceptors have been extremely beneficial in developing high energy-efficient intelligent systems. There is a strong need for electron devices to mimic the photoreceptors that could recognize the coloring information. Herein, we propose a wavelength dependent light tunable threshold switching memristive neuron devices based on Ta ₂ O ₅ :Ag nanocomposites. The threshold voltage of the device can be accurately controlled by light stimulation of different wavelength. The physical mechanism could be attributed to the effects of localized surface plasmon resonance (LSPR) effect. Moreover, the artificial leaky integrate and fire (LIF) neurons based on the memristive devices can directly convert light signal into spike sequence according to the light wavelength. Then, the color photoreceptor is finally realized based on the wavelength dependence of the neuronal spike rates.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.