{"title":"基于 Perovskite 的高效近红外微型发光二极管及尺寸效应分析","authors":"Wenjie Wei;Yikai Yun;Shaoqun Li;Zhuoying Jiang;Sijie Jiang;Jianfeng Du;Yuanyuan Tian;Hongqiang Luo;Jinchai Li;Kai Huang;Mengyu Chen;Cheng Li;Rong Zhang","doi":"10.1109/LED.2024.3434727","DOIUrl":null,"url":null,"abstract":"The state-of-the-art micro-LEDs based on group III-V chips face the challenges in size-effect and mass transfer. Recently, perovskite LEDs have rapidly developed, and their solution processability may show great advance in the miniaturization and integration with driving circuit. However, the majority of research on perovskite micro-LEDs (micro-PeLEDs) have been focused on visible light, leaving the study of near-infrared micro-PeLEDs in its infancy. Herein, we report a photolithography-compatible method for the first demonstration of near-infrared micro-PeLEDs. A peak external quantum efficiency of 5.9% is achieved with \n<inline-formula> <tex-math>$50~\\mu $ </tex-math></inline-formula>\nm pixel size and the size-effect of micro-PeLEDs is further discussed. The hyperspectral PL imaging shows the photoluminescence (PL) properties of the pixelized perovskite are not greatly affected by pixel size, and the electroluminescence (EL) analysis reveals that the size-related EL reduction is mainly caused by the inefficient current injection, which is easily to be optimized. Therefore, our work reveals that the perovskite with dispersed grains have an outstanding potential in the field of miniaturization.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Efficient Perovskite-Based Near-Infrared Micro Light-Emitting Diode and Size-Effect Analysis\",\"authors\":\"Wenjie Wei;Yikai Yun;Shaoqun Li;Zhuoying Jiang;Sijie Jiang;Jianfeng Du;Yuanyuan Tian;Hongqiang Luo;Jinchai Li;Kai Huang;Mengyu Chen;Cheng Li;Rong Zhang\",\"doi\":\"10.1109/LED.2024.3434727\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The state-of-the-art micro-LEDs based on group III-V chips face the challenges in size-effect and mass transfer. Recently, perovskite LEDs have rapidly developed, and their solution processability may show great advance in the miniaturization and integration with driving circuit. However, the majority of research on perovskite micro-LEDs (micro-PeLEDs) have been focused on visible light, leaving the study of near-infrared micro-PeLEDs in its infancy. Herein, we report a photolithography-compatible method for the first demonstration of near-infrared micro-PeLEDs. A peak external quantum efficiency of 5.9% is achieved with \\n<inline-formula> <tex-math>$50~\\\\mu $ </tex-math></inline-formula>\\nm pixel size and the size-effect of micro-PeLEDs is further discussed. The hyperspectral PL imaging shows the photoluminescence (PL) properties of the pixelized perovskite are not greatly affected by pixel size, and the electroluminescence (EL) analysis reveals that the size-related EL reduction is mainly caused by the inefficient current injection, which is easily to be optimized. Therefore, our work reveals that the perovskite with dispersed grains have an outstanding potential in the field of miniaturization.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-07-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10613918/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10613918/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
基于 III-V 族芯片的先进微型 LED 面临着尺寸效应和传质方面的挑战。最近,包晶体 LED 得到了快速发展,其溶液可加工性可能会在微型化和与驱动电路集成方面取得巨大进步。然而,有关包晶体微型 LED(micro-PeLED)的研究大多集中在可见光领域,对近红外微型 LED 的研究尚处于起步阶段。在此,我们报告了一种光刻兼容方法,首次展示了近红外微型 LED。在 50~\mu $ m 像素尺寸下实现了 5.9% 的峰值外部量子效率,并进一步讨论了微型 PeLED 的尺寸效应。高光谱聚光成像显示,像素化包晶石的光致发光(PL)特性受像素尺寸的影响不大,而电致发光(EL)分析表明,与尺寸相关的EL降低主要是由低效电流注入造成的,这一点很容易优化。因此,我们的研究揭示了具有分散晶粒的过氧化物在微型化领域的巨大潜力。
Efficient Perovskite-Based Near-Infrared Micro Light-Emitting Diode and Size-Effect Analysis
The state-of-the-art micro-LEDs based on group III-V chips face the challenges in size-effect and mass transfer. Recently, perovskite LEDs have rapidly developed, and their solution processability may show great advance in the miniaturization and integration with driving circuit. However, the majority of research on perovskite micro-LEDs (micro-PeLEDs) have been focused on visible light, leaving the study of near-infrared micro-PeLEDs in its infancy. Herein, we report a photolithography-compatible method for the first demonstration of near-infrared micro-PeLEDs. A peak external quantum efficiency of 5.9% is achieved with
$50~\mu $
m pixel size and the size-effect of micro-PeLEDs is further discussed. The hyperspectral PL imaging shows the photoluminescence (PL) properties of the pixelized perovskite are not greatly affected by pixel size, and the electroluminescence (EL) analysis reveals that the size-related EL reduction is mainly caused by the inefficient current injection, which is easily to be optimized. Therefore, our work reveals that the perovskite with dispersed grains have an outstanding potential in the field of miniaturization.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.