Novel Low On-State Voltage Reverse-Conducting LIGBT With an Electron-Controlled Gate

A novel Reverse-Conducting Lateral Insulated Gate Bipolar Transistor (RC-LIGBT) is proposed and investigated in this letter for the first time, which features the Electron-controlled Gate (EG) and Separated Short-Anode (SSA), named as EGSSA LIGBT. The EG structure is made up of two p-n junctions and is connected to the gate and anode of the device. In the on-state, EG is clamped at a high gate potential. Thus, a high-density electron channel to the anode is formed on the surface of the drift region, which greatly reduces the on-state voltage drop ( ${V} _{\text {on}}\text {)}$ of EGSSA LIGBT. Meanwhile, based on the EG structure, a low-doping p-drift can be used, which forms an inverse p-n junction with the $\text {n} ^{+}$ anode. Therefore, it requires only a small additional area to eliminate the snapback voltage and achieve the RC characteristic. In addition, the turn-off loss ( ${E} _{\text {off}}\text {)}$ of EGSSA LIGBT is optimized by using a short-circuit anode. As simulation results show, EGSSA LIGBT achieves an extremely small V _on of 1.03V, which is 42% and 65% lower than that of Conv. LIGBT and SSA LIGBT at the same ${E} _{\text {off}}$ . And at the same ${V} _{\text {on}}$ , the ${E} _{\text {off}}$ of EGSSA LIGBT is 0.10mJ/cm ² , 96% lower than that of Conv. LIGBT. What’s more, the proposed device also achieves lower reverse recovery charge ( ${Q} _{\text {rr}}\text {)}$ and smaller RC voltage drop ( ${V} _{\text {R}}\text {)}$ than SSA LIGBT.