Shaocheng Li;Shu Yang;Zhao Han;Weibing Hao;Kuang Sheng;Guangwei Xu;Shibing Long
{"title":"具有混合 PNiO 结端接扩展功能的垂直 GaN 肖特基势垒二极管","authors":"Shaocheng Li;Shu Yang;Zhao Han;Weibing Hao;Kuang Sheng;Guangwei Xu;Shibing Long","doi":"10.1109/JEDS.2024.3432783","DOIUrl":null,"url":null,"abstract":"Abstract Selective-area p-type doping has been regarded as one of the primary challenges in vertical GaN junction-based power devices. Nickel oxide (NiO), serving as a natural p-type semiconductor without the requirement for sophisticated activation and enabling adjustable charge concentration, is potentially feasible to form pn hetero-junction in GaN power devices. In this work, a vertical GaN Schottky barrier diode (SBD) featuring hybrid p-NiO junction termination extension (HP-JTE) with fluorine (F)-implanted buried layer (FIBL) has been demonstrated. With FIBL incorporated underneath p-NiO in the termination region, the reverse leakage current can be effectively reduced by approximately 3 orders of magnitude. By virtue of photon emission microscopy measurements, it has also been verified that the light emission and leakage current through p-NiO termination region can be effectively suppressed by FIBL. Thanks to the HP-JTE structure as well as the nearly ideal Schottky interface, the vertical GaN SBD exhibits a high current swing of \n<inline-formula> <tex-math>$\\sim 10^{13}$ </tex-math></inline-formula>\n, a low ideality factor of \n<inline-formula> <tex-math>$\\sim 1.02$ </tex-math></inline-formula>\n, a low differential \n<inline-formula> <tex-math>$R_{O N}$ </tex-math></inline-formula>\n of \n<inline-formula> <tex-math>$\\sim 0.89 \\mathrm{~m} \\Omega \\cdot \\mathrm{cm}^2$ </tex-math></inline-formula>\n, a low forward voltage drop of \n<inline-formula> <tex-math>$\\sim 0.8 \\mathrm{~V}$ </tex-math></inline-formula>\n (defined at \n<inline-formula> <tex-math>$100 \\mathrm{~A} / \\mathrm{cm}^2$ </tex-math></inline-formula>\n), and a breakdown voltage of \n<inline-formula> <tex-math>$\\sim 780 \\mathrm{~V}$ </tex-math></inline-formula>\n (defined at \n<inline-formula> <tex-math>$0.1 \\mathrm{~A} / \\mathrm{cm}^2$ </tex-math></inline-formula>\n). The characterizations and findings in this work can provide valuable insights into the p-NiO/GaN hetero-junction-based power devices.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"548-554"},"PeriodicalIF":2.0000,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10606442","citationCount":"0","resultStr":"{\"title\":\"Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension\",\"authors\":\"Shaocheng Li;Shu Yang;Zhao Han;Weibing Hao;Kuang Sheng;Guangwei Xu;Shibing Long\",\"doi\":\"10.1109/JEDS.2024.3432783\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract Selective-area p-type doping has been regarded as one of the primary challenges in vertical GaN junction-based power devices. Nickel oxide (NiO), serving as a natural p-type semiconductor without the requirement for sophisticated activation and enabling adjustable charge concentration, is potentially feasible to form pn hetero-junction in GaN power devices. In this work, a vertical GaN Schottky barrier diode (SBD) featuring hybrid p-NiO junction termination extension (HP-JTE) with fluorine (F)-implanted buried layer (FIBL) has been demonstrated. With FIBL incorporated underneath p-NiO in the termination region, the reverse leakage current can be effectively reduced by approximately 3 orders of magnitude. By virtue of photon emission microscopy measurements, it has also been verified that the light emission and leakage current through p-NiO termination region can be effectively suppressed by FIBL. Thanks to the HP-JTE structure as well as the nearly ideal Schottky interface, the vertical GaN SBD exhibits a high current swing of \\n<inline-formula> <tex-math>$\\\\sim 10^{13}$ </tex-math></inline-formula>\\n, a low ideality factor of \\n<inline-formula> <tex-math>$\\\\sim 1.02$ </tex-math></inline-formula>\\n, a low differential \\n<inline-formula> <tex-math>$R_{O N}$ </tex-math></inline-formula>\\n of \\n<inline-formula> <tex-math>$\\\\sim 0.89 \\\\mathrm{~m} \\\\Omega \\\\cdot \\\\mathrm{cm}^2$ </tex-math></inline-formula>\\n, a low forward voltage drop of \\n<inline-formula> <tex-math>$\\\\sim 0.8 \\\\mathrm{~V}$ </tex-math></inline-formula>\\n (defined at \\n<inline-formula> <tex-math>$100 \\\\mathrm{~A} / \\\\mathrm{cm}^2$ </tex-math></inline-formula>\\n), and a breakdown voltage of \\n<inline-formula> <tex-math>$\\\\sim 780 \\\\mathrm{~V}$ </tex-math></inline-formula>\\n (defined at \\n<inline-formula> <tex-math>$0.1 \\\\mathrm{~A} / \\\\mathrm{cm}^2$ </tex-math></inline-formula>\\n). The characterizations and findings in this work can provide valuable insights into the p-NiO/GaN hetero-junction-based power devices.\",\"PeriodicalId\":13210,\"journal\":{\"name\":\"IEEE Journal of the Electron Devices Society\",\"volume\":\"12 \",\"pages\":\"548-554\"},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2024-07-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10606442\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of the Electron Devices Society\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10606442/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10606442/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension
Abstract Selective-area p-type doping has been regarded as one of the primary challenges in vertical GaN junction-based power devices. Nickel oxide (NiO), serving as a natural p-type semiconductor without the requirement for sophisticated activation and enabling adjustable charge concentration, is potentially feasible to form pn hetero-junction in GaN power devices. In this work, a vertical GaN Schottky barrier diode (SBD) featuring hybrid p-NiO junction termination extension (HP-JTE) with fluorine (F)-implanted buried layer (FIBL) has been demonstrated. With FIBL incorporated underneath p-NiO in the termination region, the reverse leakage current can be effectively reduced by approximately 3 orders of magnitude. By virtue of photon emission microscopy measurements, it has also been verified that the light emission and leakage current through p-NiO termination region can be effectively suppressed by FIBL. Thanks to the HP-JTE structure as well as the nearly ideal Schottky interface, the vertical GaN SBD exhibits a high current swing of
$\sim 10^{13}$
, a low ideality factor of
$\sim 1.02$
, a low differential
$R_{O N}$
of
$\sim 0.89 \mathrm{~m} \Omega \cdot \mathrm{cm}^2$
, a low forward voltage drop of
$\sim 0.8 \mathrm{~V}$
(defined at
$100 \mathrm{~A} / \mathrm{cm}^2$
), and a breakdown voltage of
$\sim 780 \mathrm{~V}$
(defined at
$0.1 \mathrm{~A} / \mathrm{cm}^2$
). The characterizations and findings in this work can provide valuable insights into the p-NiO/GaN hetero-junction-based power devices.
期刊介绍:
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.