Taoufik Chargui, Fatima Lmai, Mohamed Al-Hattab and Khalid Rahmani
{"title":"利用无机 BSF 层提高 CZTS/ZTO 太阳能电池的效率","authors":"Taoufik Chargui, Fatima Lmai, Mohamed Al-Hattab and Khalid Rahmani","doi":"10.1088/1361-6641/ad6477","DOIUrl":null,"url":null,"abstract":"Copper zinc tin sulfide (CZTS) thin-film solar cells have garnered significant attention in the solar energy sector. This study aims to enhance the performance of CZTS solar cells by replacing the conventional, toxic CdS buffer layer with (ZTO) for x = 0.2. Utilizing the one-dimensional solar cell capacitance simulator (SCAPS-1D) and informed by experimental data on the physical properties of the solar cell layers, we investigated the effects of thickness, doping density, and defect density of the CZTS absorber layer on the cell’s performance. Initially, an efficiency of 14.76% was achieved. To improve this efficiency, an inorganic back surface field (BSF) layer was incorporated to mitigate charge carrier recombination at the absorber/back contact metal interface. Various materials, including CuO, , Mo and Mo , were evaluated as potential BSF layers. Comparative analysis indicated that the inclusion of the BSF layer significantly enhances the solar cell efficiency, achieving up to 27% with as the BSF material. Furthermore, the study included an analysis of temperature effects and parasitic resistances to comprehensively assess the solar cell’s performance.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"15 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improving CZTS/ZTO solar cell efficiency with inorganic BSF layers\",\"authors\":\"Taoufik Chargui, Fatima Lmai, Mohamed Al-Hattab and Khalid Rahmani\",\"doi\":\"10.1088/1361-6641/ad6477\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Copper zinc tin sulfide (CZTS) thin-film solar cells have garnered significant attention in the solar energy sector. This study aims to enhance the performance of CZTS solar cells by replacing the conventional, toxic CdS buffer layer with (ZTO) for x = 0.2. Utilizing the one-dimensional solar cell capacitance simulator (SCAPS-1D) and informed by experimental data on the physical properties of the solar cell layers, we investigated the effects of thickness, doping density, and defect density of the CZTS absorber layer on the cell’s performance. Initially, an efficiency of 14.76% was achieved. To improve this efficiency, an inorganic back surface field (BSF) layer was incorporated to mitigate charge carrier recombination at the absorber/back contact metal interface. Various materials, including CuO, , Mo and Mo , were evaluated as potential BSF layers. Comparative analysis indicated that the inclusion of the BSF layer significantly enhances the solar cell efficiency, achieving up to 27% with as the BSF material. Furthermore, the study included an analysis of temperature effects and parasitic resistances to comprehensively assess the solar cell’s performance.\",\"PeriodicalId\":21585,\"journal\":{\"name\":\"Semiconductor Science and Technology\",\"volume\":\"15 1\",\"pages\":\"\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-07-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor Science and Technology\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6641/ad6477\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad6477","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Improving CZTS/ZTO solar cell efficiency with inorganic BSF layers
Copper zinc tin sulfide (CZTS) thin-film solar cells have garnered significant attention in the solar energy sector. This study aims to enhance the performance of CZTS solar cells by replacing the conventional, toxic CdS buffer layer with (ZTO) for x = 0.2. Utilizing the one-dimensional solar cell capacitance simulator (SCAPS-1D) and informed by experimental data on the physical properties of the solar cell layers, we investigated the effects of thickness, doping density, and defect density of the CZTS absorber layer on the cell’s performance. Initially, an efficiency of 14.76% was achieved. To improve this efficiency, an inorganic back surface field (BSF) layer was incorporated to mitigate charge carrier recombination at the absorber/back contact metal interface. Various materials, including CuO, , Mo and Mo , were evaluated as potential BSF layers. Comparative analysis indicated that the inclusion of the BSF layer significantly enhances the solar cell efficiency, achieving up to 27% with as the BSF material. Furthermore, the study included an analysis of temperature effects and parasitic resistances to comprehensively assess the solar cell’s performance.
期刊介绍:
Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic.
The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including:
fundamental properties
materials and nanostructures
devices and applications
fabrication and processing
new analytical techniques
simulation
emerging fields:
materials and devices for quantum technologies
hybrid structures and devices
2D and topological materials
metamaterials
semiconductors for energy
flexible electronics.