{"title":"利用逆向计数器掺杂曲线降低埋入式沟道 PMOSFET 的低频噪声","authors":"Shuntaro Fujii;Toshiro Sakamoto;Soichi Morita;Tsutomu Miyazaki","doi":"10.1109/JEDS.2024.3430308","DOIUrl":null,"url":null,"abstract":"The impacts of retrograde counter doping (RCD) profiles on low frequency noise (LFN) of buried channel (BC) PMOSFETs were investigated. RCD profiles were formed using heavy ion implantation. The RCD profile reduced LFN by more than 50%. The origin of LFN reduction in the RCD device was investigated using TCAD simulation. It was found that both RCD profile itself and the polarity of Si surface contributed to the deeper channel position and larger energy barrier between Si surface and channel position.","PeriodicalId":2,"journal":{"name":"ACS Applied Bio Materials","volume":null,"pages":null},"PeriodicalIF":4.6000,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10601688","citationCount":"0","resultStr":"{\"title\":\"Reduction of Low Frequency Noise of Buried Channel PMOSFETs With Retrograde Counter Doping Profiles\",\"authors\":\"Shuntaro Fujii;Toshiro Sakamoto;Soichi Morita;Tsutomu Miyazaki\",\"doi\":\"10.1109/JEDS.2024.3430308\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The impacts of retrograde counter doping (RCD) profiles on low frequency noise (LFN) of buried channel (BC) PMOSFETs were investigated. RCD profiles were formed using heavy ion implantation. The RCD profile reduced LFN by more than 50%. The origin of LFN reduction in the RCD device was investigated using TCAD simulation. It was found that both RCD profile itself and the polarity of Si surface contributed to the deeper channel position and larger energy barrier between Si surface and channel position.\",\"PeriodicalId\":2,\"journal\":{\"name\":\"ACS Applied Bio Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2024-07-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10601688\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Bio Materials\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10601688/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, BIOMATERIALS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Bio Materials","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10601688/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, BIOMATERIALS","Score":null,"Total":0}
Reduction of Low Frequency Noise of Buried Channel PMOSFETs With Retrograde Counter Doping Profiles
The impacts of retrograde counter doping (RCD) profiles on low frequency noise (LFN) of buried channel (BC) PMOSFETs were investigated. RCD profiles were formed using heavy ion implantation. The RCD profile reduced LFN by more than 50%. The origin of LFN reduction in the RCD device was investigated using TCAD simulation. It was found that both RCD profile itself and the polarity of Si surface contributed to the deeper channel position and larger energy barrier between Si surface and channel position.
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