利用源极/漏极区的再生氮化铝层改善常关断氮化镓 MOSFET 的电气性能

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
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引用次数: 0

摘要

利用选择性再生长技术(SRT)在源极/漏极(S/D)区域再生长氮化镓层,成功制造出一种常关断氮化镓 MOSFET。与在 S/D 区采用 n+-GaN 选择性再生长技术的 GaN MOSFET 相比,采用再生长 AlGaN 层且 Lg 为 10 μm 的 GaN MOSFET 显示出更高的电气性能,如最大漏极电流(ID,max)为 57 mA/mm,最大跨导(gm,max)为 11 mS/mm,场效应迁移率(μFE)为 59 cm2/V-s。这是因为在 S/D 区 AlGaN/GaN 异质结形成了较高的 2DEG 密度。此外,为了适应 S/D 区窄区域再生 AlGaN 层结构质量较差的问题,在 GaN MOSFET 中采用了宽再生 AlGaN 层。特别是,随着宽再生 AlGaN 层结构质量的改善和结构的优化,以及 70 nm 厚二氧化硅钝化的应用,关态击穿电压从 25 V 提高到 192 V。这些结果表明,在 S/D 区使用宽再生 AlGaN 层的 GaN MOSFET 有助于实现高质量和均匀的常关断 GaN MOSFET,并具有优异的电气性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region

A normally-off GaN MOSFET is successfully fabricated by using the selective regrowth technique (SRT) with regrown AlGaN layer on source/drain (S/D) region. The GaN MOSFET with regrown AlGaN layer and Lg of 10 μm shows enhanced electrical performance such as maximum drain current (ID,max) of 57 mA/mm, maximum transconductance (gm,max) of 11 mS/mm, and field-effect mobility (μFE) of 59 cm2/V·s, respectively, compared to the GaN MOSFET with n+-GaN selective regrowth in S/D region. This is because of the high 2DEG density formed by AlGaN/GaN heterojunction in S/D region. Moreover, to accommodate the poor structural quality of the narrow region regrowth of AlGaN layer on the S/D region, wide regrown AlGaN layer is applied to the GaN MOSFET. Especially, the off-state breakdown voltage improves from 25 V to 192 V with the improved structural quality of wide regrown AlGaN layer and optimized structure and the application of the 70-nm thick SiO2 passivation. These result shows that GaN MOSFET with wide regrown AlGaN layer on S/D region is beneficial to achieving high-quality and uniform normally-off GaN MOSFETs with excellent electrical performance.

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来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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