{"title":"利用源极/漏极区的再生氮化铝层改善常关断氮化镓 MOSFET 的电气性能","authors":"","doi":"10.1016/j.sse.2024.108987","DOIUrl":null,"url":null,"abstract":"<div><p>A normally-off GaN MOSFET is successfully fabricated by using the selective regrowth technique (SRT) with regrown AlGaN layer on source/drain (S/D) region. The GaN MOSFET with regrown AlGaN layer and L<sub>g</sub> of 10 μm shows enhanced electrical performance such as maximum drain current (I<sub>D,max</sub>) of 57 mA/mm, maximum transconductance (g<sub>m,max</sub>) of 11 mS/mm, and field-effect mobility (μ<sub>FE</sub>) of 59 cm<sup>2</sup>/V·s, respectively, compared to the GaN MOSFET with n<sup>+</sup>-GaN selective regrowth in S/D region. This is because of the high 2DEG density formed by AlGaN/GaN heterojunction in S/D region. Moreover, to accommodate the poor structural quality of the narrow region regrowth of AlGaN layer on the S/D region, wide regrown AlGaN layer is applied to the GaN MOSFET. Especially, the off-state breakdown voltage improves from 25 V to 192 V with the improved structural quality of wide regrown AlGaN layer and optimized structure and the application of the 70-nm thick SiO<sub>2</sub> passivation. These result shows that GaN MOSFET with wide regrown AlGaN layer on S/D region is beneficial to achieving high-quality and uniform normally-off GaN MOSFETs with excellent electrical performance.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0038110124001369/pdfft?md5=59e372a1b6529a8bc762128c67a00206&pid=1-s2.0-S0038110124001369-main.pdf","citationCount":"0","resultStr":"{\"title\":\"Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region\",\"authors\":\"\",\"doi\":\"10.1016/j.sse.2024.108987\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>A normally-off GaN MOSFET is successfully fabricated by using the selective regrowth technique (SRT) with regrown AlGaN layer on source/drain (S/D) region. The GaN MOSFET with regrown AlGaN layer and L<sub>g</sub> of 10 μm shows enhanced electrical performance such as maximum drain current (I<sub>D,max</sub>) of 57 mA/mm, maximum transconductance (g<sub>m,max</sub>) of 11 mS/mm, and field-effect mobility (μ<sub>FE</sub>) of 59 cm<sup>2</sup>/V·s, respectively, compared to the GaN MOSFET with n<sup>+</sup>-GaN selective regrowth in S/D region. This is because of the high 2DEG density formed by AlGaN/GaN heterojunction in S/D region. Moreover, to accommodate the poor structural quality of the narrow region regrowth of AlGaN layer on the S/D region, wide regrown AlGaN layer is applied to the GaN MOSFET. Especially, the off-state breakdown voltage improves from 25 V to 192 V with the improved structural quality of wide regrown AlGaN layer and optimized structure and the application of the 70-nm thick SiO<sub>2</sub> passivation. These result shows that GaN MOSFET with wide regrown AlGaN layer on S/D region is beneficial to achieving high-quality and uniform normally-off GaN MOSFETs with excellent electrical performance.</p></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-07-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.sciencedirect.com/science/article/pii/S0038110124001369/pdfft?md5=59e372a1b6529a8bc762128c67a00206&pid=1-s2.0-S0038110124001369-main.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124001369\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124001369","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
利用选择性再生长技术(SRT)在源极/漏极(S/D)区域再生长氮化镓层,成功制造出一种常关断氮化镓 MOSFET。与在 S/D 区采用 n+-GaN 选择性再生长技术的 GaN MOSFET 相比,采用再生长 AlGaN 层且 Lg 为 10 μm 的 GaN MOSFET 显示出更高的电气性能,如最大漏极电流(ID,max)为 57 mA/mm,最大跨导(gm,max)为 11 mS/mm,场效应迁移率(μFE)为 59 cm2/V-s。这是因为在 S/D 区 AlGaN/GaN 异质结形成了较高的 2DEG 密度。此外,为了适应 S/D 区窄区域再生 AlGaN 层结构质量较差的问题,在 GaN MOSFET 中采用了宽再生 AlGaN 层。特别是,随着宽再生 AlGaN 层结构质量的改善和结构的优化,以及 70 nm 厚二氧化硅钝化的应用,关态击穿电压从 25 V 提高到 192 V。这些结果表明,在 S/D 区使用宽再生 AlGaN 层的 GaN MOSFET 有助于实现高质量和均匀的常关断 GaN MOSFET,并具有优异的电气性能。
Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region
A normally-off GaN MOSFET is successfully fabricated by using the selective regrowth technique (SRT) with regrown AlGaN layer on source/drain (S/D) region. The GaN MOSFET with regrown AlGaN layer and Lg of 10 μm shows enhanced electrical performance such as maximum drain current (ID,max) of 57 mA/mm, maximum transconductance (gm,max) of 11 mS/mm, and field-effect mobility (μFE) of 59 cm2/V·s, respectively, compared to the GaN MOSFET with n+-GaN selective regrowth in S/D region. This is because of the high 2DEG density formed by AlGaN/GaN heterojunction in S/D region. Moreover, to accommodate the poor structural quality of the narrow region regrowth of AlGaN layer on the S/D region, wide regrown AlGaN layer is applied to the GaN MOSFET. Especially, the off-state breakdown voltage improves from 25 V to 192 V with the improved structural quality of wide regrown AlGaN layer and optimized structure and the application of the 70-nm thick SiO2 passivation. These result shows that GaN MOSFET with wide regrown AlGaN layer on S/D region is beneficial to achieving high-quality and uniform normally-off GaN MOSFETs with excellent electrical performance.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.