揭示β-Ga2O3/h-BN范德华异质结构中的界面热传输

IF 10 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Soonsung So, Joo-Hyoung Lee
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引用次数: 0

摘要

随着全球耗电量的快速增长以及大量热量的产生,电子设备中的高效热管理已成为一项紧迫任务,这就需要全面了解设备内异质结构的热传输情况。在此,我们详细研究了由 -GaO 和六方氮化硼(h-BN)多层组成的范德华(vdW)异质结构的界面热传输。通过大量的分子动力学模拟,我们发现 -GaO/h-BN 系统的界面热导(ITC)高达 136.8MWmK,而高 ITC 值源于界面上大量的声子相互作用。除了原始界面外,还分析了 h-BN 多层膜中的应变、空位和置换缺陷等结构调制对 ITC 的影响,结果表明,存在能提高 ITC 的应变值和缺陷浓度范围,而增强的 ITC 是 -GaO 和 h-BN 多层膜之间的界面距离、声子态密度重叠和弹性失配之间相互作用的结果。这些结果不仅为理解 vdW 系统中的界面声子传输提供了见解,还为设计器件应用中的高效散热器提供了指导原则。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Unraveling interfacial thermal transport in β-Ga2O3/h-BN van der Waals heterostructures

Unraveling interfacial thermal transport in β-Ga2O3/h-BN van der Waals heterostructures

Unraveling interfacial thermal transport in β-Ga2O3/h-BN van der Waals heterostructures

As global power consumption rapidly increases with generation of significant amount of heat, efficient thermal management in electronic equipments becomes an urgent task, which requires a comprehensive understanding on thermal transport in heterostructures within devices. Here, we present detailed examination on the interfacial thermal transport of van der Waals (vdW) heterostructures, composed of β-Ga2O3 and hexagonal boron nitride (h-BN) multilayers. Through extensive molecular dynamics simulations, we show that the interfacial thermal conductance (ITC) of β-Ga2O3/h-BN system becomes as high as 136.8MWm−2K−1, and the high ITC value results from substantial phonon interaction across the interface. In addition to the pristine interface, the effect of structural modulation including strain, vacancies and substitutional defects in h-BN multilayers on the ITC is also analyzed, and it is demonstrated that there exists ranges of strain values and defect concentrations which increase the ITC, and that the enhanced ITC is the result of the interplay among the interfacial distance, the overlap in the phonon density of states and elastic mismatch between β-Ga2O3 and h-BN multilayers. These results not only provide insights into understanding interfacial phonon transport in vdW systems but also offer guiding principles for designing efficient heat dissipators in device applications.

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来源期刊
Materials Today Physics
Materials Today Physics Materials Science-General Materials Science
CiteScore
14.00
自引率
7.80%
发文量
284
审稿时长
15 days
期刊介绍: Materials Today Physics is a multi-disciplinary journal focused on the physics of materials, encompassing both the physical properties and materials synthesis. Operating at the interface of physics and materials science, this journal covers one of the largest and most dynamic fields within physical science. The forefront research in materials physics is driving advancements in new materials, uncovering new physics, and fostering novel applications at an unprecedented pace.
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