Wenyang Zhang;Li Lu;Chenfei Li;Weijie Jiang;Wenzhao Wang;Xingqiang Liu;Ablat Abliz;Da Wan
{"title":"高稳定氮掺杂 a-InGaSnO 薄膜晶体管的研究","authors":"Wenyang Zhang;Li Lu;Chenfei Li;Weijie Jiang;Wenzhao Wang;Xingqiang Liu;Ablat Abliz;Da Wan","doi":"10.1109/JEDS.2024.3424545","DOIUrl":null,"url":null,"abstract":"Herein, highly stable nitrogen (N) doped amorphous indium gallium tin oxide (a-IGTO) thinfilm transistors (TFTs) are prepared and the effects of N-doping are investigated. Compared with undoped a-IGTO TFTs, a-IGTO TFTs with 6 min N plasma treatment exhibit superior bias stress stability and a threshold voltages (\n<inline-formula> <tex-math>$V_{\\mathrm {th}}$ </tex-math></inline-formula>\n) closer to 0 V with almost no decline in mobility. In particular, the positive/negative bias stress threshold shift of N-doped a-IGTO TFTs is substantially reduced in both dark and light environment. The X-ray photoelectron spectroscopy analysis (XPS) and low frequency noise (LFN) are employed to study the mechanism of N-doping in a-IGTO TFTs. The XPS results indicate that appropriate amount of N-doping could enhance the bias stress stability and control the \n<inline-formula> <tex-math>$V_{\\mathrm {th}}$ </tex-math></inline-formula>\n efficiently by passivating the defects such as oxygen vacancy in a-IGTO films. The LFN results illustrate that the average interfacial trap density could be reduced by N-doping. Overall, the strategy presented here is effective for preparing a-IGTO TFTs with enhanced stability for potential applications in future optoelectronic displays.","PeriodicalId":2,"journal":{"name":"ACS Applied Bio Materials","volume":null,"pages":null},"PeriodicalIF":4.6000,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10587190","citationCount":"0","resultStr":"{\"title\":\"Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors\",\"authors\":\"Wenyang Zhang;Li Lu;Chenfei Li;Weijie Jiang;Wenzhao Wang;Xingqiang Liu;Ablat Abliz;Da Wan\",\"doi\":\"10.1109/JEDS.2024.3424545\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Herein, highly stable nitrogen (N) doped amorphous indium gallium tin oxide (a-IGTO) thinfilm transistors (TFTs) are prepared and the effects of N-doping are investigated. Compared with undoped a-IGTO TFTs, a-IGTO TFTs with 6 min N plasma treatment exhibit superior bias stress stability and a threshold voltages (\\n<inline-formula> <tex-math>$V_{\\\\mathrm {th}}$ </tex-math></inline-formula>\\n) closer to 0 V with almost no decline in mobility. In particular, the positive/negative bias stress threshold shift of N-doped a-IGTO TFTs is substantially reduced in both dark and light environment. The X-ray photoelectron spectroscopy analysis (XPS) and low frequency noise (LFN) are employed to study the mechanism of N-doping in a-IGTO TFTs. The XPS results indicate that appropriate amount of N-doping could enhance the bias stress stability and control the \\n<inline-formula> <tex-math>$V_{\\\\mathrm {th}}$ </tex-math></inline-formula>\\n efficiently by passivating the defects such as oxygen vacancy in a-IGTO films. The LFN results illustrate that the average interfacial trap density could be reduced by N-doping. Overall, the strategy presented here is effective for preparing a-IGTO TFTs with enhanced stability for potential applications in future optoelectronic displays.\",\"PeriodicalId\":2,\"journal\":{\"name\":\"ACS Applied Bio Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2024-07-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10587190\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Bio Materials\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10587190/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, BIOMATERIALS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Bio Materials","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10587190/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, BIOMATERIALS","Score":null,"Total":0}
引用次数: 0
摘要
本文制备了高度稳定的氮(N)掺杂非晶铟镓锡氧化物(a-IGTO)薄膜晶体管(TFT),并研究了氮掺杂的影响。与未掺杂的 a-IGTO TFT 相比,经过 6 分钟 N 等离子体处理的 a-IGTO TFT 具有优异的偏压稳定性,阈值电压($V_{\mathrm {th}}$ )接近 0 V,且迁移率几乎没有下降。特别是,掺杂 N 的 a-IGTO TFT 的正/负偏压阈值偏移在黑暗和光明环境中都大幅降低。X 射线光电子能谱分析(XPS)和低频噪声(LFN)被用来研究 a-IGTO TFT 中 N 掺杂的机理。XPS 结果表明,通过钝化 a-IGTO 薄膜中的氧空位等缺陷,适量的 N 掺杂可以增强偏压稳定性并有效控制 $V_{m\mathrm {th}}$。LFN 结果表明,N 掺杂可以降低平均界面陷阱密度。总之,本文介绍的策略能有效制备出稳定性更强的 a-IGTO TFT,有望应用于未来的光电显示领域。
Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors
Herein, highly stable nitrogen (N) doped amorphous indium gallium tin oxide (a-IGTO) thinfilm transistors (TFTs) are prepared and the effects of N-doping are investigated. Compared with undoped a-IGTO TFTs, a-IGTO TFTs with 6 min N plasma treatment exhibit superior bias stress stability and a threshold voltages (
$V_{\mathrm {th}}$
) closer to 0 V with almost no decline in mobility. In particular, the positive/negative bias stress threshold shift of N-doped a-IGTO TFTs is substantially reduced in both dark and light environment. The X-ray photoelectron spectroscopy analysis (XPS) and low frequency noise (LFN) are employed to study the mechanism of N-doping in a-IGTO TFTs. The XPS results indicate that appropriate amount of N-doping could enhance the bias stress stability and control the
$V_{\mathrm {th}}$
efficiently by passivating the defects such as oxygen vacancy in a-IGTO films. The LFN results illustrate that the average interfacial trap density could be reduced by N-doping. Overall, the strategy presented here is effective for preparing a-IGTO TFTs with enhanced stability for potential applications in future optoelectronic displays.