高稳定氮掺杂 a-InGaSnO 薄膜晶体管的研究

IF 4.6 Q2 MATERIALS SCIENCE, BIOMATERIALS
Wenyang Zhang;Li Lu;Chenfei Li;Weijie Jiang;Wenzhao Wang;Xingqiang Liu;Ablat Abliz;Da Wan
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引用次数: 0

摘要

本文制备了高度稳定的氮(N)掺杂非晶铟镓锡氧化物(a-IGTO)薄膜晶体管(TFT),并研究了氮掺杂的影响。与未掺杂的 a-IGTO TFT 相比,经过 6 分钟 N 等离子体处理的 a-IGTO TFT 具有优异的偏压稳定性,阈值电压($V_{\mathrm {th}}$ )接近 0 V,且迁移率几乎没有下降。特别是,掺杂 N 的 a-IGTO TFT 的正/负偏压阈值偏移在黑暗和光明环境中都大幅降低。X 射线光电子能谱分析(XPS)和低频噪声(LFN)被用来研究 a-IGTO TFT 中 N 掺杂的机理。XPS 结果表明,通过钝化 a-IGTO 薄膜中的氧空位等缺陷,适量的 N 掺杂可以增强偏压稳定性并有效控制 $V_{m\mathrm {th}}$。LFN 结果表明,N 掺杂可以降低平均界面陷阱密度。总之,本文介绍的策略能有效制备出稳定性更强的 a-IGTO TFT,有望应用于未来的光电显示领域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors
Herein, highly stable nitrogen (N) doped amorphous indium gallium tin oxide (a-IGTO) thinfilm transistors (TFTs) are prepared and the effects of N-doping are investigated. Compared with undoped a-IGTO TFTs, a-IGTO TFTs with 6 min N plasma treatment exhibit superior bias stress stability and a threshold voltages ( $V_{\mathrm {th}}$ ) closer to 0 V with almost no decline in mobility. In particular, the positive/negative bias stress threshold shift of N-doped a-IGTO TFTs is substantially reduced in both dark and light environment. The X-ray photoelectron spectroscopy analysis (XPS) and low frequency noise (LFN) are employed to study the mechanism of N-doping in a-IGTO TFTs. The XPS results indicate that appropriate amount of N-doping could enhance the bias stress stability and control the $V_{\mathrm {th}}$ efficiently by passivating the defects such as oxygen vacancy in a-IGTO films. The LFN results illustrate that the average interfacial trap density could be reduced by N-doping. Overall, the strategy presented here is effective for preparing a-IGTO TFTs with enhanced stability for potential applications in future optoelectronic displays.
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来源期刊
ACS Applied Bio Materials
ACS Applied Bio Materials Chemistry-Chemistry (all)
CiteScore
9.40
自引率
2.10%
发文量
464
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